LiKSO4晶体中电子-空穴陷阱中心的形成机制

Q4 Physics and Astronomy
T. Nurakhmetov, Z. Salikhodzha, A. Zhunusbekov, A. Kainarbay, D. Daurenbekov, T. Alibay, B. Sadykova, K. Zhangylyssov, B. Yussupbekova, D. Tolekov
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引用次数: 2

摘要

用真空和热激活光谱的方法研究了LiKSO4中电子空穴捕获中心的形成机制。结果表明,在阴离子络合物捕获电子和以自由基SO4−形式在晶格中定位空穴的过程中,形成了电子-空穴捕获中心。在3.0-3.1eV、2.6-2.7eV和2.3-2.4eV处磷光的出现证实了电子空穴陷阱中心的产生。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
Mechanisms formation of electron-hole trap centers in LiKSO4 crystall
The mechanisms of creation of electron-hole trapping centers in LiKSO4 have been investigated by the methods of vacuum and thermal activation spectroscopy. It is shown that electron-hole trapping centers are formed during the trapping of electrons by anionic complexes and localization of a hole in the lattice in the form of the radical SO4−. The appearance of phosphorescence at 3.0-3.1 eV, 2.6-2.7 eV and 2.3-2.4 eV confirms the creation of electron-hole trap centers.
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来源期刊
Eurasian Journal of Physics and Functional Materials
Eurasian Journal of Physics and Functional Materials Materials Science-Materials Science (miscellaneous)
CiteScore
1.10
自引率
0.00%
发文量
23
审稿时长
5 weeks
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