{"title":"金属半导体触点的电流-电压和电容-电压特性","authors":"A. Turut","doi":"10.3906/fiz-2007-11","DOIUrl":null,"url":null,"abstract":": It is expected the fact that the current following across metal-semiconductor (MS) rectifying contact named as Schottky barrier diode (SBDs) and effect of sample temperature on their electrical properties obey thermionic emission (TE) current model. But, it has been seen that the abnormal behaviors in the measured electrical characteristics cannot be exactly understood by the classical TE transport theory. In the literature, the observed abnormal behaviors have been successfully explained by a Gaussian distribution function and by the pinch-off model being interaction of the neighbor patches suggested by Tung and coworkers, the named discrete regions model as “patches” with low barrier placed in a higher uniform barrier area.","PeriodicalId":46003,"journal":{"name":"Turkish Journal of Physics","volume":" ","pages":""},"PeriodicalIF":1.4000,"publicationDate":"2020-08-31","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"76","resultStr":"{\"title\":\"Oncurrent-voltage and capacitance-voltage characteristics of metal-semiconductor contacts\",\"authors\":\"A. Turut\",\"doi\":\"10.3906/fiz-2007-11\",\"DOIUrl\":null,\"url\":null,\"abstract\":\": It is expected the fact that the current following across metal-semiconductor (MS) rectifying contact named as Schottky barrier diode (SBDs) and effect of sample temperature on their electrical properties obey thermionic emission (TE) current model. But, it has been seen that the abnormal behaviors in the measured electrical characteristics cannot be exactly understood by the classical TE transport theory. In the literature, the observed abnormal behaviors have been successfully explained by a Gaussian distribution function and by the pinch-off model being interaction of the neighbor patches suggested by Tung and coworkers, the named discrete regions model as “patches” with low barrier placed in a higher uniform barrier area.\",\"PeriodicalId\":46003,\"journal\":{\"name\":\"Turkish Journal of Physics\",\"volume\":\" \",\"pages\":\"\"},\"PeriodicalIF\":1.4000,\"publicationDate\":\"2020-08-31\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"76\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"Turkish Journal of Physics\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.3906/fiz-2007-11\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"Q3\",\"JCRName\":\"PHYSICS, MULTIDISCIPLINARY\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"Turkish Journal of Physics","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.3906/fiz-2007-11","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"Q3","JCRName":"PHYSICS, MULTIDISCIPLINARY","Score":null,"Total":0}
Oncurrent-voltage and capacitance-voltage characteristics of metal-semiconductor contacts
: It is expected the fact that the current following across metal-semiconductor (MS) rectifying contact named as Schottky barrier diode (SBDs) and effect of sample temperature on their electrical properties obey thermionic emission (TE) current model. But, it has been seen that the abnormal behaviors in the measured electrical characteristics cannot be exactly understood by the classical TE transport theory. In the literature, the observed abnormal behaviors have been successfully explained by a Gaussian distribution function and by the pinch-off model being interaction of the neighbor patches suggested by Tung and coworkers, the named discrete regions model as “patches” with low barrier placed in a higher uniform barrier area.
期刊介绍:
The Turkish Journal of Physics is published electronically 6 times a year by the Scientific and Technological Research Council of Turkey (TÜBİTAK) and accepts English-language manuscripts in various fields of research in physics, astrophysics, and interdisciplinary topics related to physics. Contribution is open to researchers of all nationalities.