金属半导体触点的电流-电压和电容-电压特性

IF 1.4 Q3 PHYSICS, MULTIDISCIPLINARY
A. Turut
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引用次数: 76

摘要

研究了肖特基势垒二极管(sbd)金属半导体(MS)整流触点的电流和样品温度对其电学性能的影响符合热离子发射(TE)电流模型。但是,已经看到电特性测量中的异常行为不能用经典TE输运理论精确地理解。在文献中,观察到的异常行为已经成功地用高斯分布函数和掐断模型来解释,掐断模型是Tung和同事提出的相邻斑块的相互作用,称为离散区域模型,即低势垒放置在较高均匀势垒区域的“斑块”。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
Oncurrent-voltage and capacitance-voltage characteristics of metal-semiconductor contacts
: It is expected the fact that the current following across metal-semiconductor (MS) rectifying contact named as Schottky barrier diode (SBDs) and effect of sample temperature on their electrical properties obey thermionic emission (TE) current model. But, it has been seen that the abnormal behaviors in the measured electrical characteristics cannot be exactly understood by the classical TE transport theory. In the literature, the observed abnormal behaviors have been successfully explained by a Gaussian distribution function and by the pinch-off model being interaction of the neighbor patches suggested by Tung and coworkers, the named discrete regions model as “patches” with low barrier placed in a higher uniform barrier area.
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来源期刊
Turkish Journal of Physics
Turkish Journal of Physics PHYSICS, MULTIDISCIPLINARY-
CiteScore
3.50
自引率
0.00%
发文量
8
期刊介绍: The Turkish Journal of Physics is published electronically 6 times a year by the Scientific and Technological Research Council of Turkey (TÜBİTAK) and accepts English-language manuscripts in various fields of research in physics, astrophysics, and interdisciplinary topics related to physics. Contribution is open to researchers of all nationalities.
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