利用光反射光谱研究GaBiAs薄膜带隙上和带隙下的光学跃迁

IF 1.4 Q3 PHYSICS, MULTIDISCIPLINARY

Turkish Journal of Physics Pub Date : 2020-08-31 DOI:10.3906/fiz-2003-17

Ömer Dönmez, A. Erol

{"title":"利用光反射光谱研究GaBiAs薄膜带隙上和带隙下的光学跃迁","authors":"Ömer Dönmez, A. Erol","doi":"10.3906/fiz-2003-17","DOIUrl":null,"url":null,"abstract":"We present optical identification of deep level defects in as-grown and annealed GaBixAs1−x (x = 0, 0.013 and 0.015) alloys grown at different temperatures (220 °C and 320 °C) by using photo-modulated reflectance (PR) spectroscopy and photoluminescence (PL). The PR measurements are employed at aboveand below-bandgap excitations, and the PR line-shape is analyzed by the third derivative functional form (TDFF). The PR at below-bandgap excitation reveals transitions at 0.757 ±0.001 eV and 0.710 ±0.002 eV at 30K and 300K, respectively. Franz-Keldysh oscillations are observed in all samples under above-bandgap excitation at PR measurements, and the built-in electric field, which may originate from the charged As-antisite defects is calculated from local extrema points in the PR spectra. The decrease in the built-in electric field after thermal annealing is explained with decreased point defect density.","PeriodicalId":46003,"journal":{"name":"Turkish Journal of Physics","volume":null,"pages":null},"PeriodicalIF":1.4000,"publicationDate":"2020-08-31","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"https://sci-hub-pdf.com/10.3906/fiz-2003-17","citationCount":"1","resultStr":"{\"title\":\"Investigating above-bandgap and below-bandgap optical transition in GaBiAs epilayers by photoreflectance spectroscopy\",\"authors\":\"Ömer Dönmez, A. Erol\",\"doi\":\"10.3906/fiz-2003-17\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"We present optical identification of deep level defects in as-grown and annealed GaBixAs1−x (x = 0, 0.013 and 0.015) alloys grown at different temperatures (220 °C and 320 °C) by using photo-modulated reflectance (PR) spectroscopy and photoluminescence (PL). The PR measurements are employed at aboveand below-bandgap excitations, and the PR line-shape is analyzed by the third derivative functional form (TDFF). The PR at below-bandgap excitation reveals transitions at 0.757 ±0.001 eV and 0.710 ±0.002 eV at 30K and 300K, respectively. Franz-Keldysh oscillations are observed in all samples under above-bandgap excitation at PR measurements, and the built-in electric field, which may originate from the charged As-antisite defects is calculated from local extrema points in the PR spectra. The decrease in the built-in electric field after thermal annealing is explained with decreased point defect density.\",\"PeriodicalId\":46003,\"journal\":{\"name\":\"Turkish Journal of Physics\",\"volume\":null,\"pages\":null},\"PeriodicalIF\":1.4000,\"publicationDate\":\"2020-08-31\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"https://sci-hub-pdf.com/10.3906/fiz-2003-17\",\"citationCount\":\"1\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"Turkish Journal of Physics\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.3906/fiz-2003-17\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"Q3\",\"JCRName\":\"PHYSICS, MULTIDISCIPLINARY\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"Turkish Journal of Physics","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.3906/fiz-2003-17","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"Q3","JCRName":"PHYSICS, MULTIDISCIPLINARY","Score":null,"Total":0}

引用次数: 1

摘要

我们利用光调制反射(PR)光谱和光致发光(PL)技术，对生长和退火的GaBixAs1−x (x = 0,0.013和0.015)合金在不同温度(220°C和320°C)下的深层缺陷进行了光学鉴定。在带隙以上和带隙以下激励下进行了PR测量，并用三阶导数函数形式(TDFF)分析了PR线形。带隙激发下的PR在30K和300K下分别为0.757±0.001 eV和0.710±0.002 eV。在PR测量中，所有样品在带隙以上激发下都观察到Franz-Keldysh振荡，并从PR光谱中的局部极值点计算了可能来自带电as -反位缺陷的内置电场。热退火后内嵌电场的减小可以用点缺陷密度的减小来解释。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

查看原文本刊更多论文

Investigating above-bandgap and below-bandgap optical transition in GaBiAs epilayers by photoreflectance spectroscopy

We present optical identification of deep level defects in as-grown and annealed GaBixAs1−x (x = 0, 0.013 and 0.015) alloys grown at different temperatures (220 °C and 320 °C) by using photo-modulated reflectance (PR) spectroscopy and photoluminescence (PL). The PR measurements are employed at aboveand below-bandgap excitations, and the PR line-shape is analyzed by the third derivative functional form (TDFF). The PR at below-bandgap excitation reveals transitions at 0.757 ±0.001 eV and 0.710 ±0.002 eV at 30K and 300K, respectively. Franz-Keldysh oscillations are observed in all samples under above-bandgap excitation at PR measurements, and the built-in electric field, which may originate from the charged As-antisite defects is calculated from local extrema points in the PR spectra. The decrease in the built-in electric field after thermal annealing is explained with decreased point defect density.

求助全文

通过发布文献求助，成功后即可免费获取论文全文。去求助

来源期刊

Turkish Journal of Physics PHYSICS, MULTIDISCIPLINARY-

CiteScore

3.50

自引率

0.00%

发文量

期刊介绍： The Turkish Journal of Physics is published electronically 6 times a year by the Scientific and Technological Research Council of Turkey (TÜBİTAK) and accepts English-language manuscripts in various fields of research in physics, astrophysics, and interdisciplinary topics related to physics. Contribution is open to researchers of all nationalities.