ELECTROPHYSICAL PROPERTIES OF NEW NANOSTRUCTURED COPPER-ZINC MANGANITE OF LANTHANUM AND MAGNESIUM

The polycrystalline copper-zinc manganite was synthesized by the solid-phase interaction in the range of 800-1200 °C of oxides of lanthanum (III), copper (II), zinc (II), manganese (III) and magnesium carbonate, thus its nanostructured particles were first obtained by grinding on the vibrating mill “Retsch” (Germany). The X-ray investigations determined that the nanostructured manganite is crystallized in the cubic syngony. On the LCR-7817/827 device(Company «Good Will Instrument Co., Ltd., Taiwan») in the range of 293-483 K at frequencies equal to 1.5 and 10 kHz, the dielectric constantand electrical resistance were investigated and it was found that this compound at 293-353 K has the semiconductorconductivity, at 353-373 K -metal and at 373-483 K -semiconductor conductivity again. The band gap widths were calculated. The permittivity at 483 K reaches gigantic values at all frequencies.Referring to the above, the objective of this paper is to study the temperature dependence of the dielectric constantand the electrical resistance of a new nanostructured copper-zinc manganite of lanthanum and magnesium.