单层SnS光电效应的第一性原理研究

IF 3.1 3区材料科学 Q2 MATERIALS SCIENCE, MULTIDISCIPLINARY

Nanomaterials and Nanotechnology Pub Date : 2022-01-01 DOI:10.1177/18479804221098299

Deyang Yu, Yangyang Hu, Ruiqi Ku, Guiling Zhang, Weiqi Li, YongYuan Jiang

{"title":"单层SnS光电效应的第一性原理研究","authors":"Deyang Yu, Yangyang Hu, Ruiqi Ku, Guiling Zhang, Weiqi Li, YongYuan Jiang","doi":"10.1177/18479804221098299","DOIUrl":null,"url":null,"abstract":"The photogalvanic effect of monolayer SnS was investigated at a small bias voltage under perpendicular irradiation using density functional theory combined with the non-equilibrium Green’s function method. The photocurrent was generated over the entire visible light range, and it was saturated at a small bias voltage for photon energies of 2.4, 2.6, 3.2 and 3.4 eV. The photocurrent shows cosine dependence of the polarization angle, which is attributed to the second-order response to the photoelectric field. These results provide a deeper understanding of the photogalvanic properties of the 2D SnS nanosheet based devices.","PeriodicalId":19018,"journal":{"name":"Nanomaterials and Nanotechnology","volume":" ","pages":""},"PeriodicalIF":3.1000,"publicationDate":"2022-01-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"1","resultStr":"{\"title\":\"First principles study of photogalvanic effect of monolayer SnS\",\"authors\":\"Deyang Yu, Yangyang Hu, Ruiqi Ku, Guiling Zhang, Weiqi Li, YongYuan Jiang\",\"doi\":\"10.1177/18479804221098299\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"The photogalvanic effect of monolayer SnS was investigated at a small bias voltage under perpendicular irradiation using density functional theory combined with the non-equilibrium Green’s function method. The photocurrent was generated over the entire visible light range, and it was saturated at a small bias voltage for photon energies of 2.4, 2.6, 3.2 and 3.4 eV. The photocurrent shows cosine dependence of the polarization angle, which is attributed to the second-order response to the photoelectric field. These results provide a deeper understanding of the photogalvanic properties of the 2D SnS nanosheet based devices.\",\"PeriodicalId\":19018,\"journal\":{\"name\":\"Nanomaterials and Nanotechnology\",\"volume\":\" \",\"pages\":\"\"},\"PeriodicalIF\":3.1000,\"publicationDate\":\"2022-01-01\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"1\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"Nanomaterials and Nanotechnology\",\"FirstCategoryId\":\"88\",\"ListUrlMain\":\"https://doi.org/10.1177/18479804221098299\",\"RegionNum\":3,\"RegionCategory\":\"材料科学\",\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"Q2\",\"JCRName\":\"MATERIALS SCIENCE, MULTIDISCIPLINARY\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"Nanomaterials and Nanotechnology","FirstCategoryId":"88","ListUrlMain":"https://doi.org/10.1177/18479804221098299","RegionNum":3,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"Q2","JCRName":"MATERIALS SCIENCE, MULTIDISCIPLINARY","Score":null,"Total":0}

引用次数: 1

摘要

利用密度泛函理论和非平衡格林函数方法，研究了垂直辐照下小偏压下单层SnS的光电流效应。光电流在整个可见光范围内产生，在2.4、2.6、3.2和3.4eV的光子能量的小偏置电压下饱和。光电流显示出偏振角的余弦依赖性，这归因于对光电场的二阶响应。这些结果提供了对基于2D SnS纳米片的器件的光电流特性的更深入理解。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

查看原文本刊更多论文

First principles study of photogalvanic effect of monolayer SnS

The photogalvanic effect of monolayer SnS was investigated at a small bias voltage under perpendicular irradiation using density functional theory combined with the non-equilibrium Green’s function method. The photocurrent was generated over the entire visible light range, and it was saturated at a small bias voltage for photon energies of 2.4, 2.6, 3.2 and 3.4 eV. The photocurrent shows cosine dependence of the polarization angle, which is attributed to the second-order response to the photoelectric field. These results provide a deeper understanding of the photogalvanic properties of the 2D SnS nanosheet based devices.

求助全文

通过发布文献求助，成功后即可免费获取论文全文。去求助

来源期刊

Nanomaterials and Nanotechnology NANOSCIENCE & NANOTECHNOLOGY-MATERIALS SCIENCE, MULTIDISCIPLINARY

CiteScore

7.20

自引率

21.60%

发文量

审稿时长

15 weeks

期刊介绍： Nanomaterials and Nanotechnology is a JCR ranked, peer-reviewed open access journal addressed to a cross-disciplinary readership including scientists, researchers and professionals in both academia and industry with an interest in nanoscience and nanotechnology. The scope comprises (but is not limited to) the fundamental aspects and applications of nanoscience and nanotechnology