{"title":"基于等效电阻的MOS晶体管参数提取与建模","authors":"S. Sharroush, Y. Abdalla","doi":"10.1080/13873954.2020.1857790","DOIUrl":null,"url":null,"abstract":"ABSTRACT During the analysis of multi-transistor circuits, the need arises to evaluate the time delay or the power consumption of the circuit. Due to the complexity of the transistor model, several complicated equations arise from which a compact-form solution cannot be obtained and a suitable physical insight cannot be drawn. With this regard, two contributions are presented in this paper. The first one is a fully analytical parameter extraction approach to be applied on the MOS transistors. The second one is a quantitative method for simplifying the analysis of MOS circuits by modelling the MOS transistor by a suitable equivalent resistance adopting the time-delay or the power-consumption equivalence criteria. The parameter-extraction method is verified by using the extracted parameters in the derived expressions according to the second contribution. Compared to other representations, the agreement of the proposed model with the simulation results is very good.","PeriodicalId":49871,"journal":{"name":"Mathematical and Computer Modelling of Dynamical Systems","volume":"27 1","pages":"50 - 86"},"PeriodicalIF":1.8000,"publicationDate":"2021-01-02","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"https://sci-hub-pdf.com/10.1080/13873954.2020.1857790","citationCount":"4","resultStr":"{\"title\":\"Parameter extraction and modelling of the MOS transistor by an equivalent resistance\",\"authors\":\"S. Sharroush, Y. Abdalla\",\"doi\":\"10.1080/13873954.2020.1857790\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"ABSTRACT During the analysis of multi-transistor circuits, the need arises to evaluate the time delay or the power consumption of the circuit. Due to the complexity of the transistor model, several complicated equations arise from which a compact-form solution cannot be obtained and a suitable physical insight cannot be drawn. With this regard, two contributions are presented in this paper. The first one is a fully analytical parameter extraction approach to be applied on the MOS transistors. The second one is a quantitative method for simplifying the analysis of MOS circuits by modelling the MOS transistor by a suitable equivalent resistance adopting the time-delay or the power-consumption equivalence criteria. The parameter-extraction method is verified by using the extracted parameters in the derived expressions according to the second contribution. Compared to other representations, the agreement of the proposed model with the simulation results is very good.\",\"PeriodicalId\":49871,\"journal\":{\"name\":\"Mathematical and Computer Modelling of Dynamical Systems\",\"volume\":\"27 1\",\"pages\":\"50 - 86\"},\"PeriodicalIF\":1.8000,\"publicationDate\":\"2021-01-02\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"https://sci-hub-pdf.com/10.1080/13873954.2020.1857790\",\"citationCount\":\"4\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"Mathematical and Computer Modelling of Dynamical Systems\",\"FirstCategoryId\":\"100\",\"ListUrlMain\":\"https://doi.org/10.1080/13873954.2020.1857790\",\"RegionNum\":4,\"RegionCategory\":\"数学\",\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"Q3\",\"JCRName\":\"COMPUTER SCIENCE, INTERDISCIPLINARY APPLICATIONS\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"Mathematical and Computer Modelling of Dynamical Systems","FirstCategoryId":"100","ListUrlMain":"https://doi.org/10.1080/13873954.2020.1857790","RegionNum":4,"RegionCategory":"数学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"Q3","JCRName":"COMPUTER SCIENCE, INTERDISCIPLINARY APPLICATIONS","Score":null,"Total":0}
Parameter extraction and modelling of the MOS transistor by an equivalent resistance
ABSTRACT During the analysis of multi-transistor circuits, the need arises to evaluate the time delay or the power consumption of the circuit. Due to the complexity of the transistor model, several complicated equations arise from which a compact-form solution cannot be obtained and a suitable physical insight cannot be drawn. With this regard, two contributions are presented in this paper. The first one is a fully analytical parameter extraction approach to be applied on the MOS transistors. The second one is a quantitative method for simplifying the analysis of MOS circuits by modelling the MOS transistor by a suitable equivalent resistance adopting the time-delay or the power-consumption equivalence criteria. The parameter-extraction method is verified by using the extracted parameters in the derived expressions according to the second contribution. Compared to other representations, the agreement of the proposed model with the simulation results is very good.
期刊介绍:
Mathematical and Computer Modelling of Dynamical Systems (MCMDS) publishes high quality international research that presents new ideas and approaches in the derivation, simplification, and validation of models and sub-models of relevance to complex (real-world) dynamical systems.
The journal brings together engineers and scientists working in different areas of application and/or theory where researchers can learn about recent developments across engineering, environmental systems, and biotechnology amongst other fields. As MCMDS covers a wide range of application areas, papers aim to be accessible to readers who are not necessarily experts in the specific area of application.
MCMDS welcomes original articles on a range of topics including:
-methods of modelling and simulation-
automation of modelling-
qualitative and modular modelling-
data-based and learning-based modelling-
uncertainties and the effects of modelling errors on system performance-
application of modelling to complex real-world systems.