{"title":"采用0.18µm CMOS工艺的多输出MOSFET传感器对探针位置和温度的磁场特性的评估","authors":"Shinya Suzuki, T. Harada","doi":"10.1541/ieejsmas.143.300","DOIUrl":null,"url":null,"abstract":"","PeriodicalId":53412,"journal":{"name":"IEEJ Transactions on Sensors and Micromachines","volume":" ","pages":""},"PeriodicalIF":0.0000,"publicationDate":"2023-09-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":"{\"title\":\"An Evaluation of the Magnetic Field Characteristics for the Probe Position and Temperature using the Multi-Output MOSFET Sensor by 0.18 µm CMOS Process\",\"authors\":\"Shinya Suzuki, T. Harada\",\"doi\":\"10.1541/ieejsmas.143.300\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"\",\"PeriodicalId\":53412,\"journal\":{\"name\":\"IEEJ Transactions on Sensors and Micromachines\",\"volume\":\" \",\"pages\":\"\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2023-09-01\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"0\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"IEEJ Transactions on Sensors and Micromachines\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1541/ieejsmas.143.300\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"Q4\",\"JCRName\":\"Engineering\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"IEEJ Transactions on Sensors and Micromachines","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1541/ieejsmas.143.300","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"Q4","JCRName":"Engineering","Score":null,"Total":0}
An Evaluation of the Magnetic Field Characteristics for the Probe Position and Temperature using the Multi-Output MOSFET Sensor by 0.18 µm CMOS Process