Clustering Artificial Atoms Induced by High-Frequency Electromagnetic Radiation in Graphene Monolayers of Multiwalled Carbon Nanotubes

A graphene-charge carrier confinement induced by high-frequency photons and a subsequent clustering of artificial atoms in graphene plane have been studied using electrophysical and Raman-spectroscopy methods. To fabricate the graphene n-p-n junctions, commensurable superlattice structures consisting of multi-walled carbon nanotubes (MWCNTs) have been formed utilizing a Langmuir-Blodgett technique. It has been shown that the p-n graphene junctions are sensitive to graphene lattice-deformation defects only. The levels of graphene defect do not host impurity electrons. One offers a mechanism of graphene monolayer self-repairing after a radiation damage. This mechanism is based on an existence of topologically protected Compton scatterers in graphene plane.