LA-ICP-MS对Bi4Si3O12晶体缺陷的元素定量成像分析

IF 3.4 2区化学 Q1 SPECTROSCOPY

Atomic Spectroscopy Pub Date : 2023-04-30 DOI:10.46770/as.2023.080

Zheng Wang

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引用次数: 0

摘要

本研究建立了一种激光烧蚀电感耦合等离子体质谱（LA-ICP-MS）方法，用于Bi4 Si3 O12（BSO）晶体中微量杂质元素的原位定量成像。该方法对晶体微区缺陷的分析具有检测限低、空间分辨率高等独特优点。每种元素的校准曲线的回归系数均大于0.99，24 Mg、45 Sc、48 Ti、90 Zr、139 La、146 Nd、172 Yb和208 Pb的检测限分别为17、5、7、48、5、6、27和7 ng/g。LA-ICP-MS测量结果与使用常规ICP-MS方法获得的结果非常一致。在晶体生长过程中，元素杂质在BSO晶体的轴向上可能存在偏析现象。最后，观察了杂质元素在晶体树枝晶缺陷区的分布。我们认为，这项工作为探索晶体的成分缺陷关系提出了一种新的微创分析方法。

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Elemental Quantitative Imaging Analysis Of Bi4Si3O12 Crystals Defects By LA-ICP-MS

: In this study, a laser ablation inductively coupled plasma mass spectrometry (LA-ICP-MS) method is developed for in -situ quantitative imaging of trace impurity elements in Bi 4 Si 3 O 12 (BSO) crystals. This method has unique advantages of low detection limit and high spatial resolution for the analysis of defects in crystal microregions. The regression coefficients of the calibration curves for each element were greater than 0.99, and the detection limits (DLs) were 17, 5, 7, 48, 5, 7, 16, 27, and 7 ng/g for 24 Mg, 45 Sc, 48 Ti, 90 Zr, 139 La, 146 Nd, 172 Yb and 208 Pb, respectively. The LA-ICP-MS measurements were in good agreement with the results obtained using conventional ICP-MS method. Segregation phenomena of elemental impurities in the axial direction of the BSO crystal can exist during crystal growth. Finally, the distribution of the impurity elements in the dendritic crystal defect region of the crystal was visualized. We believe that this work proposes a novel less-invasive analysis method for exploring the composition-defect relationship of crystals.

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来源期刊

Atomic Spectroscopy 物理-光谱学

CiteScore

5.30

自引率

14.70%

发文量

审稿时长

4.5 months

期刊介绍： The ATOMIC SPECTROSCOPY is a peer-reviewed international journal started in 1962 by Dr. Walter Slavin and now is published by Atomic Spectroscopy Press Limited (ASPL). It is intended for the rapid publication of both original articles and review articles in the fields of AAS, AFS, ICP-OES, ICP-MS, GD-MS, TIMS, SIMS, AMS, LIBS, XRF and related techniques. Manuscripts dealing with (i) instrumentation & fundamentals, (ii) methodology development & applications, and (iii) standard reference materials (SRMs) development can be submitted for publication.