用统一的全区域MOSFET模型设计和优化超深亚微米CMOS反相器

Q4 Engineering

Journal of Integrated Circuits and Systems Pub Date : 2022-12-31 DOI:10.29292/jics.v17i3.603

Shruti Kalra

{"title":"用统一的全区域MOSFET模型设计和优化超深亚微米CMOS反相器","authors":"Shruti Kalra","doi":"10.29292/jics.v17i3.603","DOIUrl":null,"url":null,"abstract":"Complementary Metal Oxide Semiconductor (CMOS) has always remained the dominant integrated circuit technology specifically for designing digital circuits. This paper examines the modelling (utilizing $\\alpha$-power based MOSFET model), simulation (utilizing HSPICE simulation) and optimization (utilizing Particle Swarm Optimization (PSO) and Artificial Bee Colony (ABC) techniques) of ultradeep submicron CMOS based digital inverter, performs insightful analysis and extracts formulas for the optimal transistor sizing. Additionally, the study serves as an implementation forum for the thermal analysis of transient characteristics of CMOS inverters at the ultradeep submicron technology node (at 300K and 400K). The results lie within the acceptable range of 1-10\\%.","PeriodicalId":39974,"journal":{"name":"Journal of Integrated Circuits and Systems","volume":" ","pages":""},"PeriodicalIF":0.0000,"publicationDate":"2022-12-31","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":"{\"title\":\"Design and Optimization of Ultradeep Submicron CMOS Inverter Using a Unified All Regional MOSFET Model\",\"authors\":\"Shruti Kalra\",\"doi\":\"10.29292/jics.v17i3.603\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"Complementary Metal Oxide Semiconductor (CMOS) has always remained the dominant integrated circuit technology specifically for designing digital circuits. This paper examines the modelling (utilizing $\\\\alpha$-power based MOSFET model), simulation (utilizing HSPICE simulation) and optimization (utilizing Particle Swarm Optimization (PSO) and Artificial Bee Colony (ABC) techniques) of ultradeep submicron CMOS based digital inverter, performs insightful analysis and extracts formulas for the optimal transistor sizing. Additionally, the study serves as an implementation forum for the thermal analysis of transient characteristics of CMOS inverters at the ultradeep submicron technology node (at 300K and 400K). The results lie within the acceptable range of 1-10\\\\%.\",\"PeriodicalId\":39974,\"journal\":{\"name\":\"Journal of Integrated Circuits and Systems\",\"volume\":\" \",\"pages\":\"\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2022-12-31\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"0\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"Journal of Integrated Circuits and Systems\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.29292/jics.v17i3.603\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"Q4\",\"JCRName\":\"Engineering\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"Journal of Integrated Circuits and Systems","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.29292/jics.v17i3.603","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"Q4","JCRName":"Engineering","Score":null,"Total":0}

引用次数: 0

摘要

互补金属氧化物半导体（CMOS）一直是专门用于设计数字电路的主要集成电路技术。本文研究了超深亚微米CMOS数字逆变器的建模（利用$\alpha$-基于功率的MOSFET模型）、仿真（利用HSPICE仿真）和优化（利用粒子群优化（PSO）和人工蜂群（ABC）技术），进行了深入的分析，并提取了最佳晶体管尺寸的公式。此外，该研究还为超深亚微米技术节点（300K和400K）CMOS反相器瞬态特性的热分析提供了一个实现论坛。结果在1-10%的可接受范围内。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

查看原文本刊更多论文

Design and Optimization of Ultradeep Submicron CMOS Inverter Using a Unified All Regional MOSFET Model

Complementary Metal Oxide Semiconductor (CMOS) has always remained the dominant integrated circuit technology specifically for designing digital circuits. This paper examines the modelling (utilizing $\alpha$-power based MOSFET model), simulation (utilizing HSPICE simulation) and optimization (utilizing Particle Swarm Optimization (PSO) and Artificial Bee Colony (ABC) techniques) of ultradeep submicron CMOS based digital inverter, performs insightful analysis and extracts formulas for the optimal transistor sizing. Additionally, the study serves as an implementation forum for the thermal analysis of transient characteristics of CMOS inverters at the ultradeep submicron technology node (at 300K and 400K). The results lie within the acceptable range of 1-10\%.

求助全文

通过发布文献求助，成功后即可免费获取论文全文。去求助

来源期刊

Journal of Integrated Circuits and Systems Engineering-Electrical and Electronic Engineering

CiteScore

0.90

自引率

0.00%

发文量

期刊介绍： This journal will present state-of-art papers on Integrated Circuits and Systems. It is an effort of both Brazilian Microelectronics Society - SBMicro and Brazilian Computer Society - SBC to create a new scientific journal covering Process and Materials, Device and Characterization, Design, Test and CAD of Integrated Circuits and Systems. The Journal of Integrated Circuits and Systems is published through Special Issues on subjects to be defined by the Editorial Board. Special issues will publish selected papers from both Brazilian Societies annual conferences, SBCCI - Symposium on Integrated Circuits and Systems and SBMicro - Symposium on Microelectronics Technology and Devices.