基于ISFET的DNA传感器:电流-电压特性和对DNA分子的敏感性

L. Gasparyan, I. Mazo, V. Simonyan, F. Gasparyan
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引用次数: 5

摘要

从理论上研究了纳米ISFET生物传感器的源漏电流和电流灵敏度与水溶液中DNA分子浓度的关系。在计算中,对电流沟道中的电荷载流子分布和沟道中高电场中载流子的迁移率行为进行了影响。DNA分子对ISFET生物传感器工作的影响表现为栅极表面电荷大小的变化。从相当低浓度的DNA开始,ISFET传感器对水溶液中DNA分子的存在做出反应,这表现为通道电导的调制,从而场效应晶体管的源极-漏极电流的变化。结果表明,电流对DNA分子浓度的敏感性线性地依赖于源极-漏极电压并达到高值。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
ISFET Based DNA Sensor: Current-Voltage Characteristic and Sensitivity to DNA Molecules
Dependency of both source-drain current and current sensitivity of nanosize ISFET biosensor vs. concentration of DNA molecules in aqueous solution theoretically is investigated. In calculations it is carried out effects concerning charge carriers distribution in current channel and concerning carriers’ mobility behavior in high electrical fields in the channel. The influence of DNA molecules on the work of ISFET biosensors is manifested by a change in the magnitude of the gate surface charge. Starting with fairly low concentrations of DNA, ISFET sensors respond to the presence of DNA molecules in an aqueous solution which is manifested by modulation of channel conductance and therefore the source-drain current changes of the field-effect transistor. It is shown that the current sensitivity with respect to concentration of DNA molecules linearly depends on the source-drain voltage and reaches high values.
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