Ryan M. Evans, Arvind K. Balijepalli, Anthony J. Kearsley
{"title":"纳米电子学中的扩散限制反应","authors":"Ryan M. Evans, Arvind K. Balijepalli, Anthony J. Kearsley","doi":"10.4310/maa.2019.v26.n2.a4","DOIUrl":null,"url":null,"abstract":"A partial differential equation (PDE) was developed to describe time-dependent ligand-receptor interactions for applications in biosensing using field effect transistors (FET). The model describes biochemical interactions at the sensor surface (or biochemical gate) located at the bottom of a solution-well, which result in a time-dependent change in the FET conductance. It was shown that one can exploit the disparate length scales of the solution-well and biochemical gate to reduce the coupled PDE model to a single nonlinear integrodifferential equation (IDE) that describes the concentration of reacting species. Although this equation has a convolution integral with a singular kernel, a numerical approximation was constructed by applying the method of lines. The need for specialized quadrature techniques was obviated and numerical evidence strongly suggests that this method achieves first-order accuracy. Results reveal a depletion region on the biochemical gate, which non-uniformly alters the surface potential of the semiconductor.","PeriodicalId":18467,"journal":{"name":"Methods and applications of analysis","volume":"1 1","pages":""},"PeriodicalIF":0.6000,"publicationDate":"2017-10-19","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":"{\"title\":\"Diffusion-limited reactions in nanoscale electronics\",\"authors\":\"Ryan M. Evans, Arvind K. Balijepalli, Anthony J. Kearsley\",\"doi\":\"10.4310/maa.2019.v26.n2.a4\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"A partial differential equation (PDE) was developed to describe time-dependent ligand-receptor interactions for applications in biosensing using field effect transistors (FET). The model describes biochemical interactions at the sensor surface (or biochemical gate) located at the bottom of a solution-well, which result in a time-dependent change in the FET conductance. It was shown that one can exploit the disparate length scales of the solution-well and biochemical gate to reduce the coupled PDE model to a single nonlinear integrodifferential equation (IDE) that describes the concentration of reacting species. Although this equation has a convolution integral with a singular kernel, a numerical approximation was constructed by applying the method of lines. The need for specialized quadrature techniques was obviated and numerical evidence strongly suggests that this method achieves first-order accuracy. Results reveal a depletion region on the biochemical gate, which non-uniformly alters the surface potential of the semiconductor.\",\"PeriodicalId\":18467,\"journal\":{\"name\":\"Methods and applications of analysis\",\"volume\":\"1 1\",\"pages\":\"\"},\"PeriodicalIF\":0.6000,\"publicationDate\":\"2017-10-19\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"0\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"Methods and applications of analysis\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.4310/maa.2019.v26.n2.a4\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"Q4\",\"JCRName\":\"MATHEMATICS, APPLIED\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"Methods and applications of analysis","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.4310/maa.2019.v26.n2.a4","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"Q4","JCRName":"MATHEMATICS, APPLIED","Score":null,"Total":0}
Diffusion-limited reactions in nanoscale electronics
A partial differential equation (PDE) was developed to describe time-dependent ligand-receptor interactions for applications in biosensing using field effect transistors (FET). The model describes biochemical interactions at the sensor surface (or biochemical gate) located at the bottom of a solution-well, which result in a time-dependent change in the FET conductance. It was shown that one can exploit the disparate length scales of the solution-well and biochemical gate to reduce the coupled PDE model to a single nonlinear integrodifferential equation (IDE) that describes the concentration of reacting species. Although this equation has a convolution integral with a singular kernel, a numerical approximation was constructed by applying the method of lines. The need for specialized quadrature techniques was obviated and numerical evidence strongly suggests that this method achieves first-order accuracy. Results reveal a depletion region on the biochemical gate, which non-uniformly alters the surface potential of the semiconductor.