Influence of annealing on photoelectric characteristics and stability of elements based on Si-Bi2Te3−xSex

In the manufacture of Bi2 Te3−x Sex -based elements using two sources of the deposited substance, they were initially annealed at a temperature of 150–200 °Ñ in a low vacuum. Heat treatment led to a slight increase in short circuit current and an increase in open circuit voltage. When the elements were heated in high vacuum, as well as in atmospheres of argon, nitrogen, hydrogen, helium and other gases, irreversible changes in the characteristics were not detected. Heat treatment of elements at a temperature of 100–150 °C in oxygen always improves their performance. It is assumed that annealing stimulates the growth of the transition layer at the interface. Annealing of solar cells based on Si-Bi2 Te3−x Sex at an even higher temperature leads to a further irreversible deterioration of their characteristics.