研究了Ni掺杂对喷雾热解法制备Zn1-xNixO薄膜结构、光学和电学性能的影响

IF 1 4区材料科学

Journal of Ovonic Research Pub Date : 2023-03-01 DOI:10.15251/jor.2023.192.197

C. Zaouche, L. Dahbi, S. Benramache, A. Harouache, Y. Derouiche, M. Kharroubi, H. A. Haslouk, M. A. A. Banalhag, H. M. Alkhojah

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引用次数: 0

摘要

研究了Ni掺杂对玻璃基喷雾热解沉积Zn1-xNixO薄膜结构、光学和电学性能的影响。本研究的主要目的是研究不同掺杂水平x的Zn1-xNixO薄膜对半导体的物理和光学性质的变化。这些掺杂水平分别为0 at.%、2 at.%和4 at.%，8 at.%以及12 at.%。透射光谱表明，Zn1-xNi xO薄膜在88%至95%的可见光区域具有良好的光学透明度。Zn1-xNixO薄膜的光学能隙在3.25到3.35eV之间变化。urbach能在65到230meV之间变化。然而，Zn0.88Ni0.12O薄膜存在许多缺陷，且urbach能量最大。Zn0.88Ni0.12O薄膜具有最小的光学能隙值。Zn0.88Ni0.12O薄膜的电导率最大值为9.40（Ω.cm）-1。薄膜的平均电导率约为（7.52（Ω.cn）-1）。Zn1-xNixO薄膜的XRD图谱表明，薄膜为多晶结构，具有六方纤锌矿结构。

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Study the effect of Ni doping on structural, optical and electrical properties of Zn1-xNixO thin films deposited by spray pyrolysis technique

The effect of Ni doping on structural, optical and electrical properties of deposited Zn1-xNixO thin films on glass substrate by spray pyrolysis technique has been studied. The main objective of this research is to study the change of the physical and optical properties of Zn1-xNixO thin films that are fabricant to semiconductor with different doping levels x. These levels are 0 at.%, 2 at.%, 4 at.%, 8 at.% and 12 at.%. The transmission spectra show that the Zn1-xNixO thin films have a good optical transparency in the visible region from 88 to 95%. The optical gap energy of the Zn1-xNixO thin films varied between 3.25 and 3.35 eV. The urbach energy varied between 65 and 230 meV. However, the Zn0.88Ni0.12O thin films have many defects with maximum value of urbach energy. The Zn0.88Ni0.12O thin films have minimum value of optical gap energy. The Zn0.88Ni0.12O thin films have maximum value of the electrical conductivity which is 9.40 (Ω.cm)-1 . The average electrical conductivity of our films is about (7.52 (Ω.cm)-1 ). XRD patterns of the Zn1- xNixO thin films indicate that films are polycrystalline with hexagonal wurtzite structure.

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来源期刊

Journal of Ovonic Research Materials Science-Electronic, Optical and Magnetic Materials

CiteScore

1.60

自引率

20.00%

发文量

期刊介绍： Journal of Ovonic Research (JOR) appears with six issues per year and is open to the reviews, papers, short communications and breakings news inserted as Short Notes, in the field of ovonic (mainly chalcogenide) materials for memories, smart materials based on ovonic materials (combinations of various elements including chalcogenides), materials with nano-structures based on various alloys, as well as semiconducting materials and alloys based on amorphous silicon, germanium, carbon in their various nanostructured forms, either simple or doped/alloyed with hydrogen, fluorine, chlorine and other elements of high interest for applications in electronics and optoelectronics. Papers on minerals with possible applications in electronics and optoelectronics are encouraged.