AlN基忆阻器件的电学特性和导电机理

IF 1 4区材料科学

Journal of Ovonic Research Pub Date : 2022-12-20 DOI:10.15251/jor.2022.186.815

J. Wen, W. Hua, Q. Gong, B. Wang

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引用次数: 0

摘要

氮化铝(AlN)忆阻器件因其与CMOS制造技术的兼容性而备受关注，更有可能扩展到电力电子器件中。然而，导电机制和电阻开关(RS)参数的可变性是商业应用的主要问题。在这篇文章中,我们已获得Al / AlN / Pt记忆电阻器的电特性在当前合规限制1𝜇𝜇𝜇𝜇和10𝜇𝜇𝜇𝜇,分别。在此基础上，对Set和Reset过程中的开关参数进行了统计。最后，开发了一个量子点接触模型来解释导电机制，并显示了导电丝在RS过渡期间的演变。

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Electrical characteristics and conductive mechanisms of AlN-based memristive devices

Aluminum nitride (AlN) memristive devices have attracted a great deal of attention because of their compatibility with the CMOS fabrication technology, and more likely to be extended to power electronic devices. However, the conductive mechanism and the variability of resistance switching (RS) parameters are major issues for commercial applications. In this paper, we have obtained electrical characteristics of the Al/AlN/Pt memristors under the current compliance limits of 1 𝜇𝜇𝜇𝜇 and 10 𝜇𝜇𝜇𝜇, respectively. Furthermore, the statistics of switching parameters has been done in the Set and Reset processes. Finally, a quantum point contact model has been developed to account for conducting mechanisms and shows the evolution of the conductive filament during RS transitions.

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来源期刊

Journal of Ovonic Research Materials Science-Electronic, Optical and Magnetic Materials

CiteScore

1.60

自引率

20.00%

发文量

期刊介绍： Journal of Ovonic Research (JOR) appears with six issues per year and is open to the reviews, papers, short communications and breakings news inserted as Short Notes, in the field of ovonic (mainly chalcogenide) materials for memories, smart materials based on ovonic materials (combinations of various elements including chalcogenides), materials with nano-structures based on various alloys, as well as semiconducting materials and alloys based on amorphous silicon, germanium, carbon in their various nanostructured forms, either simple or doped/alloyed with hydrogen, fluorine, chlorine and other elements of high interest for applications in electronics and optoelectronics. Papers on minerals with possible applications in electronics and optoelectronics are encouraged.