基于模拟乘法器的电流控制接地忆阻仿真电路

Q3 Engineering
M. A. Carrasco-Aguilar, C. Sánchez-López, F. E. Morales-Lopez
{"title":"基于模拟乘法器的电流控制接地忆阻仿真电路","authors":"M. A. Carrasco-Aguilar, C. Sánchez-López, F. E. Morales-Lopez","doi":"10.22201/icat.24486736e.2022.20.3.932","DOIUrl":null,"url":null,"abstract":"This paper proposes a current-controlled grounded memristor emulator circuit based on single four-quadrant analog multiplier, a resistor and a capacitor. The behavioral model of the proposed emulator circuit is analyzed, highlighting its characteristics. Experimental results are given to investigate its ability for different operating frequencies and they are in accordance with theoretical analysis and simulation results. By using a divider circuit, the memristance variation in the time domain is obtained. It is observed that the pinched hysteresis loop at high frequency loses symmetry due in part to the shift that introduces a multiplication of sinusoidal signals.","PeriodicalId":15073,"journal":{"name":"Journal of Applied Research and Technology","volume":" ","pages":""},"PeriodicalIF":0.0000,"publicationDate":"2022-07-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":"{\"title\":\"Current-controlled grounded memristor emulator circuit based on analog multiplier\",\"authors\":\"M. A. Carrasco-Aguilar, C. Sánchez-López, F. E. Morales-Lopez\",\"doi\":\"10.22201/icat.24486736e.2022.20.3.932\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"This paper proposes a current-controlled grounded memristor emulator circuit based on single four-quadrant analog multiplier, a resistor and a capacitor. The behavioral model of the proposed emulator circuit is analyzed, highlighting its characteristics. Experimental results are given to investigate its ability for different operating frequencies and they are in accordance with theoretical analysis and simulation results. By using a divider circuit, the memristance variation in the time domain is obtained. It is observed that the pinched hysteresis loop at high frequency loses symmetry due in part to the shift that introduces a multiplication of sinusoidal signals.\",\"PeriodicalId\":15073,\"journal\":{\"name\":\"Journal of Applied Research and Technology\",\"volume\":\" \",\"pages\":\"\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2022-07-01\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"0\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"Journal of Applied Research and Technology\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.22201/icat.24486736e.2022.20.3.932\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"Q3\",\"JCRName\":\"Engineering\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"Journal of Applied Research and Technology","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.22201/icat.24486736e.2022.20.3.932","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"Q3","JCRName":"Engineering","Score":null,"Total":0}
引用次数: 0

摘要

本文提出了一种基于单四象限模拟乘法器、电阻和电容的电流控制接地忆阻器仿真电路。分析了仿真电路的行为模型,突出了仿真电路的特点。实验结果与理论分析和仿真结果相吻合。利用分频电路,得到了时域内的忆阻变化。可以观察到,在高频处,由于引入正弦信号倍增的移位,压缩的迟滞环失去了对称性。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
Current-controlled grounded memristor emulator circuit based on analog multiplier
This paper proposes a current-controlled grounded memristor emulator circuit based on single four-quadrant analog multiplier, a resistor and a capacitor. The behavioral model of the proposed emulator circuit is analyzed, highlighting its characteristics. Experimental results are given to investigate its ability for different operating frequencies and they are in accordance with theoretical analysis and simulation results. By using a divider circuit, the memristance variation in the time domain is obtained. It is observed that the pinched hysteresis loop at high frequency loses symmetry due in part to the shift that introduces a multiplication of sinusoidal signals.
求助全文
通过发布文献求助,成功后即可免费获取论文全文。 去求助
来源期刊
Journal of Applied Research and Technology
Journal of Applied Research and Technology 工程技术-工程:电子与电气
CiteScore
1.50
自引率
0.00%
发文量
0
审稿时长
6-12 weeks
期刊介绍: The Journal of Applied Research and Technology (JART) is a bimonthly open access journal that publishes papers on innovative applications, development of new technologies and efficient solutions in engineering, computing and scientific research. JART publishes manuscripts describing original research, with significant results based on experimental, theoretical and numerical work. The journal does not charge for submission, processing, publication of manuscripts or for color reproduction of photographs. JART classifies research into the following main fields: -Material Science: Biomaterials, carbon, ceramics, composite, metals, polymers, thin films, functional materials and semiconductors. -Computer Science: Computer graphics and visualization, programming, human-computer interaction, neural networks, image processing and software engineering. -Industrial Engineering: Operations research, systems engineering, management science, complex systems and cybernetics applications and information technologies -Electronic Engineering: Solid-state physics, radio engineering, telecommunications, control systems, signal processing, power electronics, electronic devices and circuits and automation. -Instrumentation engineering and science: Measurement devices (pressure, temperature, flow, voltage, frequency etc.), precision engineering, medical devices, instrumentation for education (devices and software), sensor technology, mechatronics and robotics.
×
引用
GB/T 7714-2015
复制
MLA
复制
APA
复制
导出至
BibTeX EndNote RefMan NoteFirst NoteExpress
×
提示
您的信息不完整,为了账户安全,请先补充。
现在去补充
×
提示
您因"违规操作"
具体请查看互助需知
我知道了
×
提示
确定
请完成安全验证×
copy
已复制链接
快去分享给好友吧!
我知道了
右上角分享
点击右上角分享
0
联系我们:info@booksci.cn Book学术提供免费学术资源搜索服务,方便国内外学者检索中英文文献。致力于提供最便捷和优质的服务体验。 Copyright © 2023 布克学术 All rights reserved.
京ICP备2023020795号-1
ghs 京公网安备 11010802042870号
Book学术文献互助
Book学术文献互助群
群 号:481959085
Book学术官方微信