二维半导体中的光激发

IF 2.9 Q3 CHEMISTRY, PHYSICAL
Thorsten Deilmann, M. Rohlfing, K. Thygesen
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引用次数: 0

摘要

二维(2D)材料揭示了许多迷人的物理和化学性质。由于量子约束和增强的多体效应,特别是光学性质与体相比较发生了变化。二维材料的光学特性可以通过衬底、掺杂、应变、堆叠、电场或磁场等多种方式进行修改。本文主要介绍了二维半导体的激发态和光学性质的理论描述,并特别注意了当前的挑战和未来的机遇。虽然所提出的方法是完全通用的,适用于任何二维材料,但我们讨论了过渡金属二硫族化合物、它们的异质结构和一些来自计算二维材料数据库的新材料的结果。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
Optical excitations in 2D semiconductors
Two-dimensional (2D) materials have revealed many fascinating physical and chemical properties. Due to the quantum confinement and enhanced many-body effects especially the optical properties are altered compared to their bulk counterparts. The optics of 2D materials can easily be modified by various means, e.g. the substrate, doping, strain, stacking, electric or magnetic fields. In this review we focus on the theoretical description of the excited states and optical properties of 2D semiconductors paying particular attention to the current challenges and future opportunities. While the presented methodology is completely general and applicable to any 2D material, we discuss results for the transition metal dichalcogenides, their heterostructures, and some novel materials from the computational 2D materials database.
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来源期刊
CiteScore
3.70
自引率
11.50%
发文量
46
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