在DTMOS配置中带SELBOX的UTBB FD-SOI MOSFET

Q4 Engineering

Journal of Integrated Circuits and Systems Pub Date : 2022-12-31 DOI:10.29292/jics.v17i3.641

N. G. Junior, Jeverson Cardoso da Silva, E. Martins, Maria Glória Caño De Andrade

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引用次数: 0

摘要

摘要:本文将首次分析使用SELBOX(选择性埋藏氧化物)衬底的超薄体和埋藏氧化物完全耗尽绝缘体上硅(UTBB FDSOI) n沟道和动态阈值MOS配置(DTMOS)。将比较在DTMOS模式和SELBOX不同间隙宽度(WGAP)的标准偏置配置下的漏极和基板电流、跨导(gm)和亚阈值斜率(SS)。此外，还通过数值模拟研究了输出电导和跨电导增益。结果表明，在DTMOS模式下的SELBOX结构是模拟应用的竞争候选人。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

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UTBB FD-SOI MOSFET with SELBOX in DTMOS Configuration

Abstract— For the first time, Ultra-Thin Body and Buried Oxide Fully Depleted Silicon-On-Insulator (UTBB FDSOI) n-channel with Dynamic Threshold MOS configuration (DTMOS) using the SELBOX (Selective Buried OXide) substrate will be analyzed. The drain and substrate current, transconductance (gm) and Subthreshold Slope (SS) will be compared in the DTMOS mode and the standard biasing configuration for different gap width (WGAP) of SELBOX. Additionally, the output conductance and the transconductance gain also studied through numerical simulations. The results indicate that the SELBOX structure in DTMOS mode is competitive candidates for analog applications.

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来源期刊

Journal of Integrated Circuits and Systems Engineering-Electrical and Electronic Engineering

CiteScore

0.90

自引率

0.00%

发文量

期刊介绍： This journal will present state-of-art papers on Integrated Circuits and Systems. It is an effort of both Brazilian Microelectronics Society - SBMicro and Brazilian Computer Society - SBC to create a new scientific journal covering Process and Materials, Device and Characterization, Design, Test and CAD of Integrated Circuits and Systems. The Journal of Integrated Circuits and Systems is published through Special Issues on subjects to be defined by the Editorial Board. Special issues will publish selected papers from both Brazilian Societies annual conferences, SBCCI - Symposium on Integrated Circuits and Systems and SBMicro - Symposium on Microelectronics Technology and Devices.