低剂量率电离辐射对CdZnTe晶体复介电常数的影响

IF 0.3 4区物理与天体物理 Q4 PHYSICS, MULTIDISCIPLINARY

Lithuanian Journal of Physics Pub Date : 2023-04-06 DOI:10.3952/physics.2023.63.1.5

O. Poluboiarov, O. Chugai, S. Oliinyk, D. Sliusar, S. Sulima

{"title":"低剂量率电离辐射对CdZnTe晶体复介电常数的影响","authors":"O. Poluboiarov, O. Chugai, S. Oliinyk, D. Sliusar, S. Sulima","doi":"10.3952/physics.2023.63.1.5","DOIUrl":null,"url":null,"abstract":"For the first time, the change in the real and imaginary parts of Cd1–xZnxTe crystals complex dielectric permittivity when exposed to ionizing radiation with a small exposure dose rate (about hundreds of μR/h) has been studied. Significant changes in the values of both parts of complex dielectric permittivity have been revealed. Regularities of specified changes have been established and explained taking into account a different radiation effect on free and bound charges. The basis of effect is the changes in the charge carrier localized states of point defect associates. Their appearance is due to a high concentration and a variety of intrinsic structural defects in the studied crystals as a consequence of the deviation of the crystal composition from the stoichiometric one.","PeriodicalId":18144,"journal":{"name":"Lithuanian Journal of Physics","volume":" ","pages":""},"PeriodicalIF":0.3000,"publicationDate":"2023-04-06","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":"{\"title\":\"Effect of low-dose-rate ionizing radiation on the complex dielectric permittivity of CdZnTe crystals\",\"authors\":\"O. Poluboiarov, O. Chugai, S. Oliinyk, D. Sliusar, S. Sulima\",\"doi\":\"10.3952/physics.2023.63.1.5\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"For the first time, the change in the real and imaginary parts of Cd1–xZnxTe crystals complex dielectric permittivity when exposed to ionizing radiation with a small exposure dose rate (about hundreds of μR/h) has been studied. Significant changes in the values of both parts of complex dielectric permittivity have been revealed. Regularities of specified changes have been established and explained taking into account a different radiation effect on free and bound charges. The basis of effect is the changes in the charge carrier localized states of point defect associates. Their appearance is due to a high concentration and a variety of intrinsic structural defects in the studied crystals as a consequence of the deviation of the crystal composition from the stoichiometric one.\",\"PeriodicalId\":18144,\"journal\":{\"name\":\"Lithuanian Journal of Physics\",\"volume\":\" \",\"pages\":\"\"},\"PeriodicalIF\":0.3000,\"publicationDate\":\"2023-04-06\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"0\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"Lithuanian Journal of Physics\",\"FirstCategoryId\":\"101\",\"ListUrlMain\":\"https://doi.org/10.3952/physics.2023.63.1.5\",\"RegionNum\":4,\"RegionCategory\":\"物理与天体物理\",\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"Q4\",\"JCRName\":\"PHYSICS, MULTIDISCIPLINARY\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"Lithuanian Journal of Physics","FirstCategoryId":"101","ListUrlMain":"https://doi.org/10.3952/physics.2023.63.1.5","RegionNum":4,"RegionCategory":"物理与天体物理","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"Q4","JCRName":"PHYSICS, MULTIDISCIPLINARY","Score":null,"Total":0}

引用次数: 0

摘要

首次研究了Cd1-xZnxTe晶体在小剂量率(约几百μR/h)电离辐射下复介电常数的实部和虚部变化。复介电常数和复介电常数的数值都发生了显著的变化。考虑到不同的辐射对自由电荷和束缚电荷的影响，已经建立并解释了特定变化的规律。效应的基础是点缺陷伴合体载流子局域态的变化。它们的出现是由于所研究的晶体中的高浓度和各种内在结构缺陷，这是晶体组成偏离化学计量组成的结果。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

查看原文本刊更多论文

Effect of low-dose-rate ionizing radiation on the complex dielectric permittivity of CdZnTe crystals

For the first time, the change in the real and imaginary parts of Cd1–xZnxTe crystals complex dielectric permittivity when exposed to ionizing radiation with a small exposure dose rate (about hundreds of μR/h) has been studied. Significant changes in the values of both parts of complex dielectric permittivity have been revealed. Regularities of specified changes have been established and explained taking into account a different radiation effect on free and bound charges. The basis of effect is the changes in the charge carrier localized states of point defect associates. Their appearance is due to a high concentration and a variety of intrinsic structural defects in the studied crystals as a consequence of the deviation of the crystal composition from the stoichiometric one.

求助全文

通过发布文献求助，成功后即可免费获取论文全文。去求助

来源期刊

Lithuanian Journal of Physics 物理-物理：综合

CiteScore

0.90

自引率

16.70%

发文量

审稿时长

>12 weeks

期刊介绍： The main aim of the Lithuanian Journal of Physics is to reflect the most recent advances in various fields of theoretical, experimental, and applied physics, including: mathematical and computational physics; subatomic physics; atoms and molecules; chemical physics; electrodynamics and wave processes; nonlinear and coherent optics; spectroscopy.