Au/n-GaN独立肖特基结构的电容-频率(C-V–f)和电导-频率(G-V–f

IF 0.8 Q4 MATERIALS SCIENCE, MULTIDISCIPLINARY
H. Mazari, K. Ameur, R. Khelifi
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引用次数: 1

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本文章由计算机程序翻译,如有差异,请以英文原文为准。
Capacitance–frequency (C-V–f) and conductance–frequency (G-V–f) characteristics of Au/n-GaN freestanding Schottky structure
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来源期刊
Journal of New Technology and Materials
Journal of New Technology and Materials MATERIALS SCIENCE, MULTIDISCIPLINARY-
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