用SILAR方法形成ZnO薄膜

IF 0.5 4区 化学 Q4 CHEMISTRY, MULTIDISCIPLINARY
Chemija Pub Date : 2019-06-30 DOI:10.6001/CHEMIJA.V30I2.3999
B. Šimkūnaitė-Stanynienė, G. Grinciene, L. Naruškevičius, L. Tamašauskaitė-Tamašiūnaitė, A. Selskis, V. Pakštas, V. Jasulaitienė, E. Norkus
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引用次数: 1

摘要

采用连续离子层吸附反应(SILAR)方法沉积了ZnO薄膜。利用扫描电子显微镜(SEM)、X射线衍射仪(XRD)和X射线光电子能谱仪(XPS)对ZnO薄膜的形貌、结构和组成进行了研究。使用紫外-可见分光光度法(UV/Vis)研究了沉积在玻璃衬底上的ZnO薄层的光学性能。研究发现,ZnO薄膜的光学性能取决于用于沉积ZnO层的阴离子前体溶液的组成。此外,当0.026 mol l–1 Na2B4O7+0.002 mol l–l KMnO4溶液用作沉积ZnO层的阴离子前体溶液时,ZnO层获得了3.86 eV的最高带隙能量。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
Formation of ZnO films using the SILAR method
The thin ZnO films were deposited using the successive ionic layer adsorption and reaction (SILAR) method. The morphology, structure and composition of the thin ZnO films were examined using scanning electron microscopy (SEM), X-ray diffraction (XRD) and X-ray photoelectron spectroscopy (XPS). The optical properties of the thin ZnO layers, which were deposited onto glass substrates, were investigated using ultraviolet–visible spectrophotometry (UV/Vis). It was found that the optical properties of the ZnO films depend on the composition of anionic precursor solutions, which were used for deposition of the ZnO layers. Moreover, the highest band gap energy of 3.86 eV was obtained for the ZnO layer when the 0.026 mol l–1 Na2B4O7 + 0.002 mol l–1 KMnO4 solution was used as the anionic precursor solution for the deposition of ZnO layers.
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来源期刊
Chemija
Chemija 化学-化学综合
CiteScore
1.30
自引率
16.70%
发文量
14
审稿时长
>12 weeks
期刊介绍: Chemija publishes original research articles and reviews from all branches of modern chemistry, including physical, inorganic, analytical, organic, polymer chemistry, electrochemistry, and multidisciplinary approaches.
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