{"title":"5.9 mW E / w波段SiGe-HBT LNA, 48 GHz 3db带宽,4.5 db噪声系数","authors":"Eren Vardarli, P. Sakalas, M. Schröter","doi":"10.1109/LMWC.2022.3192488","DOIUrl":null,"url":null,"abstract":"The theory, design, and implementation of a millimeter-wave (mm-wave) two-stage common-emitter (CE) low noise amplifier (LNA) using a 130-nm silicon-germanium (SiGe):C Bipolar CMOS technology is presented. The LNA was optimized for wideband performance from 62 to 110 GHz for both mm-wave radar/sensing and wireless communication applications. A two-stage broadband noise and impedance matching technique is used to obtain a relativity flat gain (13.5 dB) and noise figure (NF) (4.5 dB) across the E-/W-band. Low-voltage $(V_{\\text {CC}}=0.7\\,\\,\\text {V})$ and low-power (5.9 mW) operation is achieved by forward biasing the base–collector junction, while the wideband capability is further improved by a T-type input matching network utilizing constant quality factor curves. To the best of authors’ knowledge, the presented LNA has the widest 3-dB bandwidth with the lowest power consumption in the literature for silicon-based E-/W-band LNAs.","PeriodicalId":13130,"journal":{"name":"IEEE Microwave and Wireless Components Letters","volume":"32 1","pages":"1451-1454"},"PeriodicalIF":2.9000,"publicationDate":"2022-12-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"4","resultStr":"{\"title\":\"A 5.9 mW E-/W-Band SiGe-HBT LNA With 48 GHz 3-dB Bandwidth and 4.5-dB Noise Figure\",\"authors\":\"Eren Vardarli, P. Sakalas, M. Schröter\",\"doi\":\"10.1109/LMWC.2022.3192488\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"The theory, design, and implementation of a millimeter-wave (mm-wave) two-stage common-emitter (CE) low noise amplifier (LNA) using a 130-nm silicon-germanium (SiGe):C Bipolar CMOS technology is presented. The LNA was optimized for wideband performance from 62 to 110 GHz for both mm-wave radar/sensing and wireless communication applications. A two-stage broadband noise and impedance matching technique is used to obtain a relativity flat gain (13.5 dB) and noise figure (NF) (4.5 dB) across the E-/W-band. Low-voltage $(V_{\\\\text {CC}}=0.7\\\\,\\\\,\\\\text {V})$ and low-power (5.9 mW) operation is achieved by forward biasing the base–collector junction, while the wideband capability is further improved by a T-type input matching network utilizing constant quality factor curves. To the best of authors’ knowledge, the presented LNA has the widest 3-dB bandwidth with the lowest power consumption in the literature for silicon-based E-/W-band LNAs.\",\"PeriodicalId\":13130,\"journal\":{\"name\":\"IEEE Microwave and Wireless Components Letters\",\"volume\":\"32 1\",\"pages\":\"1451-1454\"},\"PeriodicalIF\":2.9000,\"publicationDate\":\"2022-12-01\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"4\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"IEEE Microwave and Wireless Components Letters\",\"FirstCategoryId\":\"5\",\"ListUrlMain\":\"https://doi.org/10.1109/LMWC.2022.3192488\",\"RegionNum\":2,\"RegionCategory\":\"工程技术\",\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"Q2\",\"JCRName\":\"ENGINEERING, ELECTRICAL & ELECTRONIC\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"IEEE Microwave and Wireless Components Letters","FirstCategoryId":"5","ListUrlMain":"https://doi.org/10.1109/LMWC.2022.3192488","RegionNum":2,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"Q2","JCRName":"ENGINEERING, ELECTRICAL & ELECTRONIC","Score":null,"Total":0}
A 5.9 mW E-/W-Band SiGe-HBT LNA With 48 GHz 3-dB Bandwidth and 4.5-dB Noise Figure
The theory, design, and implementation of a millimeter-wave (mm-wave) two-stage common-emitter (CE) low noise amplifier (LNA) using a 130-nm silicon-germanium (SiGe):C Bipolar CMOS technology is presented. The LNA was optimized for wideband performance from 62 to 110 GHz for both mm-wave radar/sensing and wireless communication applications. A two-stage broadband noise and impedance matching technique is used to obtain a relativity flat gain (13.5 dB) and noise figure (NF) (4.5 dB) across the E-/W-band. Low-voltage $(V_{\text {CC}}=0.7\,\,\text {V})$ and low-power (5.9 mW) operation is achieved by forward biasing the base–collector junction, while the wideband capability is further improved by a T-type input matching network utilizing constant quality factor curves. To the best of authors’ knowledge, the presented LNA has the widest 3-dB bandwidth with the lowest power consumption in the literature for silicon-based E-/W-band LNAs.
期刊介绍:
The IEEE Microwave and Wireless Components Letters (MWCL) publishes four-page papers (3 pages of text + up to 1 page of references) that focus on microwave theory, techniques and applications as they relate to components, devices, circuits, biological effects, and systems involving the generation, modulation, demodulation, control, transmission, and detection of microwave signals. This includes scientific, technical, medical and industrial activities. Microwave theory and techniques relates to electromagnetic waves in the frequency range of a few MHz and a THz; other spectral regions and wave types are included within the scope of the MWCL whenever basic microwave theory and techniques can yield useful results. Generally, this occurs in the theory of wave propagation in structures with dimensions comparable to a wavelength, and in the related techniques for analysis and design.