氧化镓MOS器件的理论计算特性

Q2 Engineering

International Journal of Emerging Trends in Engineering Research Pub Date : 2023-05-15 DOI:10.30534/ijeter/2023/071152023

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引用次数: 1

摘要

利用材料中载流子有效质量与材料中本征费米能级相关的物理概念，通过给出的通用质能等效方程dE/E=dm/m，从理论上确定了（100）取向β-Ga2O3半导体上MOS器件的性质，其中E是能量，m是自由电子质量。利用β-Ga2O3半导体的各向同性电子有效质量为0.27m和带隙为4.8eV的已知参数来确定MOS器件的性质，以及SiO2中电子加热的阈值参数为2MV/cmeV。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

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Theoretically Calculated Properties of a MOS Device on Gallium Oxide

The properties of a MOS device on (100) oriented β-Ga2O3 semiconductor are determined theoretically utilizing the concept of physics that the carrier effective masses in materials are related to the intrinsic Fermi energy levels in materials by the universal mass-energy equivalence equation given as dE/E = dm/m, where E is the energy and m is the free electron mass. The known parameters of isotropic electron effective mass of 0.27m and the bandgap of 4.8 eV for β-Ga2O3 semiconductor are utilized to determine the properties of the MOS device along with the parameter of threshold for electron heating in SiO2 as 2 MV/cm-eV.

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来源期刊

International Journal of Emerging Trends in Engineering Research Engineering-Engineering (all)

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