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III-V型半导体化合物中载流子光学声子散射迁移率的数值计算

IF 0.3 Q4 MATHEMATICS
Transactions of A Razmadze Mathematical Institute Pub Date : 2018-12-01 DOI:10.1016/j.trmi.2018.06.002
Revaz Kobaidze, Elza Khutsishvili, Nodar Kekelidze
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引用次数: 4

摘要

利用数值方法计算了光学声子的散射迁移率，并在Matlab中编写了计算光学声子散射迁移率的通用程序。对快中子辐照的InAs材料进行了计算。
本文章由计算机程序翻译，如有差异，请以英文原文为准。
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Numerical computation of charge carriers optical phonon scattering mobility in III–V semiconductor compounds

Optical phonon scattering mobility has been calculated using numerical methods, and a general program was developed in Matlab to calculate mobility due to scattering on optical phonons. Calculations were done for InAs material that was irradiated by fast neutrons.

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来源期刊
Transactions of A Razmadze Mathematical Institute
Transactions of A Razmadze Mathematical Institute MATHEMATICS-
CiteScore
0.50
自引率
50.00%
发文量
0
审稿时长
22 weeks
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