太阳能电池用硅基纳米线中SiGe量子阱的实现

IF 1 4区 材料科学 Q4 MATERIALS SCIENCE, MULTIDISCIPLINARY
M. Safi, A. Aissat, H. Guesmi, J. Vilcot
{"title":"太阳能电池用硅基纳米线中SiGe量子阱的实现","authors":"M. Safi, A. Aissat, H. Guesmi, J. Vilcot","doi":"10.15251/djnb.2023.181.327","DOIUrl":null,"url":null,"abstract":"This study focuses on modelling and optimizing a new Si nanowire solar cell containing a SiGe/Si quantum well. Quantum efficiency measurements show that the proposed structure has a higher energy absorption advantage and stronger than that of a solar cell based on a standard Si p-i-n nanowire. As a result, the insertion of 14 layers of SiGe/Si quantum well improved the short circuit current density and the efficiency by a factor of about 1.24 and 1.37, respectively. The best concentration and radius values obtained are x = 0.05 and r = 0.190 µm, respectively, with a strain of less than 1%.","PeriodicalId":11233,"journal":{"name":"Digest Journal of Nanomaterials and Biostructures","volume":" ","pages":""},"PeriodicalIF":1.0000,"publicationDate":"2023-03-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":"{\"title\":\"SiGe quantum wells implementation in Si based nanowires for solar cells applications\",\"authors\":\"M. Safi, A. Aissat, H. Guesmi, J. Vilcot\",\"doi\":\"10.15251/djnb.2023.181.327\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"This study focuses on modelling and optimizing a new Si nanowire solar cell containing a SiGe/Si quantum well. Quantum efficiency measurements show that the proposed structure has a higher energy absorption advantage and stronger than that of a solar cell based on a standard Si p-i-n nanowire. As a result, the insertion of 14 layers of SiGe/Si quantum well improved the short circuit current density and the efficiency by a factor of about 1.24 and 1.37, respectively. The best concentration and radius values obtained are x = 0.05 and r = 0.190 µm, respectively, with a strain of less than 1%.\",\"PeriodicalId\":11233,\"journal\":{\"name\":\"Digest Journal of Nanomaterials and Biostructures\",\"volume\":\" \",\"pages\":\"\"},\"PeriodicalIF\":1.0000,\"publicationDate\":\"2023-03-01\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"0\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"Digest Journal of Nanomaterials and Biostructures\",\"FirstCategoryId\":\"88\",\"ListUrlMain\":\"https://doi.org/10.15251/djnb.2023.181.327\",\"RegionNum\":4,\"RegionCategory\":\"材料科学\",\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"Q4\",\"JCRName\":\"MATERIALS SCIENCE, MULTIDISCIPLINARY\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"Digest Journal of Nanomaterials and Biostructures","FirstCategoryId":"88","ListUrlMain":"https://doi.org/10.15251/djnb.2023.181.327","RegionNum":4,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"Q4","JCRName":"MATERIALS SCIENCE, MULTIDISCIPLINARY","Score":null,"Total":0}
引用次数: 0

摘要

本研究的重点是对一种含有SiGe/Si量子阱的新型硅纳米线太阳能电池进行建模和优化。量子效率测量表明,所提出的结构具有更高的能量吸收优势,并且比基于标准Si p-i-n纳米线的太阳能电池更强。结果,插入14层SiGe/Si量子阱分别将短路电流密度和效率提高了约1.24和1.37倍。在应变小于1%的情况下,获得的最佳浓度和半径值分别为x=0.05和r=0.190µm。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
SiGe quantum wells implementation in Si based nanowires for solar cells applications
This study focuses on modelling and optimizing a new Si nanowire solar cell containing a SiGe/Si quantum well. Quantum efficiency measurements show that the proposed structure has a higher energy absorption advantage and stronger than that of a solar cell based on a standard Si p-i-n nanowire. As a result, the insertion of 14 layers of SiGe/Si quantum well improved the short circuit current density and the efficiency by a factor of about 1.24 and 1.37, respectively. The best concentration and radius values obtained are x = 0.05 and r = 0.190 µm, respectively, with a strain of less than 1%.
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来源期刊
Digest Journal of Nanomaterials and Biostructures
Digest Journal of Nanomaterials and Biostructures 工程技术-材料科学:综合
CiteScore
1.50
自引率
22.20%
发文量
116
审稿时长
4.3 months
期刊介绍: Under the aegis of the Academy of Romanian Scientists Edited by: -Virtual Institute of Physics operated by Virtual Company of Physics.
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