晶界突起位置对多晶硅薄膜晶体管断态电流的影响

IF 3.7 3区 工程技术 Q2 MATERIALS SCIENCE, MULTIDISCIPLINARY
JooWon Yang, Yong-Sang Kim, J. Jeon, K. Park
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引用次数: 1

摘要

摘要采用三维计算机辅助设计(TCAD)模拟技术,研究了晶界(GB)突出对p沟道多晶硅薄膜晶体管断态电流(IOFF)的影响。我们发现,在高漏偏置(VDS =−10 V)下,IOFF随GB凸点位置的变化变化超过10倍,而如果GB没有凸点,即具有平坦表面,其变化小于2倍。TCAD分析表明,IOFF主要由带间隧穿引起,当GB突出物位于距离高掺杂漏极区一定距离处时,由于GB突出物增强了漏极结处的电场,IOFF显著增加。我们还发现,当GB线不垂直于通道方向,而是有一定的倾斜角时,IOFF进一步增加,因为当GB线位于GB突内时,必然包含一个使电场最大化的关键区域。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
Effects of the grain boundary protrusion position on the off-state current of polycrystalline silicon thin-film transistors
ABSTRACT We report the effects of grain boundary (GB) protrusion on the off-state current (IOFF) of p-channel polycrystalline silicon thin-film transistors by using three-dimensional technology computer-aided design (TCAD) simulation. We found that the IOFF at a high drain bias, VDS = −10 V, varies more than 10 times as the position of the GB protrusion changes, whereas it varies less than two times if the GB has no protrusion, i.e. has a flat surface. The TCAD analysis showed that the IOFF was mainly caused by band-to-band tunneling and that it increased noticeably when the GB protrusion was located at a certain distance from the highly doped drain region because the GB protrusion intensified the electric field at the drain junction. We also found that the IOFF increases further when the GB line is not perpendicular to the channel direction but has some tilt angle because the GB protrusion necessarily encompassed a critical region that maximized the electric field when it was positioned within the GB protrusion.
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来源期刊
Journal of Information Display
Journal of Information Display MATERIALS SCIENCE, MULTIDISCIPLINARY-
CiteScore
7.10
自引率
5.40%
发文量
27
审稿时长
30 weeks
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