浸涂掺铝ZnO薄膜的电学和光学性质

Q4 Chemistry

Mongolian Journal of Chemistry Pub Date : 2021-10-30 DOI:10.5564/mjc.v22i48.1743

R. P. Yadav, K. B. Rai, S. Shrestha

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引用次数: 0

摘要

采用浸涂法合成了未掺杂和铝掺杂的氧化锌薄膜。研究了铝掺杂、起始溶液老化和样品老化对薄膜电学性能的影响。ZnO:Al薄膜的薄层电阻最小为2.5at%，而载流子浓度最大。未掺杂和铝掺杂的氧化锌薄膜都被发现是高度透明的，在367nm至1038nm的波长范围内处于65-79%之间。沉积膜的带隙从3.22eV略微变化到3.27eV。

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Electrical and optical properties of dip coated Al-doped ZnO thin films

Undoped and Aluminum doped Zinc Oxide thin films were synthesized by dip coating technique. The electrical properties of the films were studied due to the Aluminum doping, starting solution aging and sample aging. The sheet resistance of ZnO:Al films was minimum at 2.5 at % whereas carrier concentration is maximum. Both undoped and aluminum doped Zinc Oxide thin films were found to be highly transparent lying in between 65 - 79 % in the wavelength range 367 nm to 1038 nm. The band gap of deposited films changed slightly from 3.22 eV to 3.27 eV.

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来源期刊

Mongolian Journal of Chemistry Materials Science-Materials Chemistry

CiteScore

1.10

自引率

0.00%

发文量

审稿时长

20 weeks