Daniel R. Celino, Adelcio M de Souza, Caio Luiz Machado Pereira Plazas, R. Ragi, Murilo A Romero
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Physics Based RTD Model Accounting for Space Charge and Phonon Scattering Effects
This paper presents a fully analytical model for the current-voltage (I–V) characteristics of Resonant Tunneling Diodes. Based on Tsu-Esaki formalism, we consider the full electrical potential distribution in the structure, including the space charge regions at the emitter and collector layers. In addition, we account for the scattering suffered by carriers when tunneling through the double-barrier region, as a function of the applied bias voltage. These considerations improve the accuracy of the proposed model when compared with other approaches while keeping it physics based and fully analytical. Finally, the model is validated with experimental and numericaldata, demonstrating its feasibility for applications in circuit simulation environments.
期刊介绍:
This journal will present state-of-art papers on Integrated Circuits and Systems. It is an effort of both Brazilian Microelectronics Society - SBMicro and Brazilian Computer Society - SBC to create a new scientific journal covering Process and Materials, Device and Characterization, Design, Test and CAD of Integrated Circuits and Systems. The Journal of Integrated Circuits and Systems is published through Special Issues on subjects to be defined by the Editorial Board. Special issues will publish selected papers from both Brazilian Societies annual conferences, SBCCI - Symposium on Integrated Circuits and Systems and SBMicro - Symposium on Microelectronics Technology and Devices.