单微孔每像素薄锗硅互补金属氧化物半导体图像传感器与增强灵敏度高达1700纳米

IF 1.1 4区 物理与天体物理 Q4 NANOSCIENCE & NANOTECHNOLOGY
E. Ponizovskaya-Devine, A. Mayet, Amita Rawat, Ahasan Ahamed, Shih-Yuan Wang, A. Elrefaie, Toshishige Yamada, M. Saif Islam
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引用次数: 2

摘要

摘要我们提出了一种具有背面照明的锗“Ge-on-Si”CMOS图像传感器,用于近红外(NIR)电磁波(波长范围为300至1700 nm)检测,这是光学传感器技术所必需的。微孔有助于提高光效率,并将范围扩展到1.7 μm波长。我们演示了优化微孔的宽度和深度,以获得最大的近红外吸收。我们通过在像素之间采用薄SiO2深沟槽隔离来减少串扰。最后,我们展示了引入微孔后器件电容降低26%至50%。这种cmos兼容的Ge-on-Si传感器将实现高密度、超快和高效的近红外成像。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
Single microhole per pixel for thin Ge-on-Si complementary metal-oxide semiconductor image sensor with enhanced sensitivity up to 1700 nm
Abstract. We present a germanium “Ge-on-Si” CMOS image sensor with backside illumination for the near-infrared (NIR) electromagnetic waves (wavelength range 300 to 1700 nm) detection essential for optical sensor technology. The microholes help to enhance the optical efficiency and extend the range to the 1.7-μm wavelength. We demonstrate an optimization for the width and depth of the microholes for maximal absorption in the NIR. We show a reduction in the crosstalk by employing thin SiO2 deep trench isolation in between the pixels. Finally, we show a 26 to 50% reduction in the device capacitance with the introduction of a microhole. Such CMOS-compatible Ge-on-Si sensors will enable high-density, ultrafast, and efficient NIR imaging.
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来源期刊
Journal of Nanophotonics
Journal of Nanophotonics 工程技术-光学
CiteScore
2.60
自引率
6.70%
发文量
42
审稿时长
3 months
期刊介绍: The Journal of Nanophotonics publishes peer-reviewed papers focusing on the fabrication and application of nanostructures that facilitate the generation, propagation, manipulation, and detection of light from the infrared to the ultraviolet regimes.
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