43‐2:杰出学生论文:在PI衬底上喷雾热解制备高性能共面非晶IGZO tft，用于低成本制造可折叠AMOLED显示器

Digest of technical papers. SID International Symposium Pub Date : 2023-06-01 DOI:10.1002/sdtp.16633

Jin A. Bae, Arqum Ali, Chanju Park, Jin Jang

{"title":"43‐2:杰出学生论文:在PI衬底上喷雾热解制备高性能共面非晶IGZO tft，用于低成本制造可折叠AMOLED显示器","authors":"Jin A. Bae, Arqum Ali, Chanju Park, Jin Jang","doi":"10.1002/sdtp.16633","DOIUrl":null,"url":null,"abstract":"We report a method for low‐cost deposition of bubble‐free and high‐quality amorphous InGaZnO (a‐IGZO) on polyimide (PI) substrate for foldable AMOLED display by spray pyrolysis. The coplanar thin‐film transistor (TFT) with spray‐pyrolyzed (SP) a‐IGZO on PI substrate exhibits VTH of ‐0.8 V, Î¼SAT of 40.95 cm2V‐1s‐1, and SS of 0.18 Vdec‐1 with on/off current ratio of ~108. The TFT shows VTH shift of ‐0.40 V and +0.05 V under tesnsile bending and positive bias temperature stress, respectively. The ring oscillator made of SP a‐IGZO TFTs exhibits an oscillation frequency of 2.38 MHz at VDD of 10 V. The SP a‐IGZO TFT can be used for low‐cost, high‐performance, and flexible display TFT backplanes.","PeriodicalId":91069,"journal":{"name":"Digest of technical papers. SID International Symposium","volume":"24 10","pages":""},"PeriodicalIF":0.0000,"publicationDate":"2023-06-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":"{\"title\":\"43‐2: Distinguished Student Paper: High‐Performance, Coplanar Amorphous IGZO TFTs by Spray Pyrolysis on PI Substrate for Low Cost Manufacturing of Foldable AMOLED Display\",\"authors\":\"Jin A. Bae, Arqum Ali, Chanju Park, Jin Jang\",\"doi\":\"10.1002/sdtp.16633\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"We report a method for low‐cost deposition of bubble‐free and high‐quality amorphous InGaZnO (a‐IGZO) on polyimide (PI) substrate for foldable AMOLED display by spray pyrolysis. The coplanar thin‐film transistor (TFT) with spray‐pyrolyzed (SP) a‐IGZO on PI substrate exhibits VTH of ‐0.8 V, Î¼SAT of 40.95 cm2V‐1s‐1, and SS of 0.18 Vdec‐1 with on/off current ratio of ~108. The TFT shows VTH shift of ‐0.40 V and +0.05 V under tesnsile bending and positive bias temperature stress, respectively. The ring oscillator made of SP a‐IGZO TFTs exhibits an oscillation frequency of 2.38 MHz at VDD of 10 V. The SP a‐IGZO TFT can be used for low‐cost, high‐performance, and flexible display TFT backplanes.\",\"PeriodicalId\":91069,\"journal\":{\"name\":\"Digest of technical papers. SID International Symposium\",\"volume\":\"24 10\",\"pages\":\"\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2023-06-01\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"0\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"Digest of technical papers. SID International Symposium\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1002/sdtp.16633\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"Digest of technical papers. SID International Symposium","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1002/sdtp.16633","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}

引用次数: 0

摘要

本文报道了一种在聚酰亚胺(PI)衬底上低成本沉积无气泡和高质量非晶InGaZnO (a - IGZO)的方法，该方法用于可折叠AMOLED显示器。在PI衬底上采用喷雾热解(SP) a - IGZO共面薄膜晶体管(TFT)的VTH为‐0.8 V， Î¼SAT为40.95 cm2V‐1s‐1,SS为0.18 Vdec‐1，通/关电流比为~108。在拉伸弯曲和正偏置温度应力下，TFT的VTH位移分别为‐0.40 V和+0.05 V。由SP - IGZO TFTs制成的环形振荡器在VDD为10 V时振荡频率为2.38 MHz。SP - IGZO TFT可用于低成本，高性能和柔性显示TFT背板。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

查看原文本刊更多论文

43‐2: Distinguished Student Paper: High‐Performance, Coplanar Amorphous IGZO TFTs by Spray Pyrolysis on PI Substrate for Low Cost Manufacturing of Foldable AMOLED Display

We report a method for low‐cost deposition of bubble‐free and high‐quality amorphous InGaZnO (a‐IGZO) on polyimide (PI) substrate for foldable AMOLED display by spray pyrolysis. The coplanar thin‐film transistor (TFT) with spray‐pyrolyzed (SP) a‐IGZO on PI substrate exhibits VTH of ‐0.8 V, Î¼SAT of 40.95 cm2V‐1s‐1, and SS of 0.18 Vdec‐1 with on/off current ratio of ~108. The TFT shows VTH shift of ‐0.40 V and +0.05 V under tesnsile bending and positive bias temperature stress, respectively. The ring oscillator made of SP a‐IGZO TFTs exhibits an oscillation frequency of 2.38 MHz at VDD of 10 V. The SP a‐IGZO TFT can be used for low‐cost, high‐performance, and flexible display TFT backplanes.

求助全文

通过发布文献求助，成功后即可免费获取论文全文。去求助

来源期刊

Digest of technical papers. SID International Symposium

自引率

0.00%

发文量