用扫描探针显微镜对降解非晶硅组件的界面评价

IF 3.4 Q2 MATERIALS SCIENCE, MULTIDISCIPLINARY
E. L. Meyer, G. O. Osayemwenre
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引用次数: 1

摘要

这是一项非晶硅太阳能电池降解的研究。在纳米尺度上研究了太阳能电池的结构缺陷和机械应力。分析了细胞的界面形态、变形和内部分层。对粗糙度参数进行了充分的分析,以研究本研究中使用的非晶硅太阳能组件(a-Si:H)的降解状态。在薄膜太阳能电池的生产过程中,粗糙度参数测试是必要的,因为它可以量化粗糙度参数与太阳能电池电效率之间的关系。然而,在本研究中,粗糙度分析不仅用于量化a- si:H模块的性能,而且还用于补充其机械退化分析。粗糙度指标,如均方根(RMS)粗糙度和平均粗糙度从线轮廓。采用扫描探针显微镜(SPM)和峰值力定量纳米力学(QNM)技术对分析样品的横截面积进行测量。通过粘接力和变形分析对方法进行了验证;确定了高粗糙度值是机械退化的结果。从粗糙度参数和力学退化分析的结果进一步观察了从原位测量,它们显示出良好的相容性。这种技术的好处是,它提供了一个很好的程序来评估机械退化,而不会破坏a- si:H模块的任何部分的固有层。
本文章由计算机程序翻译,如有差异,请以英文原文为准。

Interfacial assessment of degraded amorphous silicon module using scanning probe microscopy

Interfacial assessment of degraded amorphous silicon module using scanning probe microscopy

This is a study of the degradation of amorphous silicon solar cells. The study accessed structural defects and the mechanical stress of solar cells at nanoscale level. Interface morphology, deformation, and internal delamination of the cells were analyzed. Adequate analysis of roughness parameters was performed to investigate the state of degradation of the amorphous silicon solar modules (a-Si:H) used in this study. Roughness parametric test is necessary in thin film solar cells production process because it is used to quantify the relationship that exists between roughness parameters and electrical efficiencies of solar cells. However, in this study, a roughness analysis was not only performed to quantify the performance of the a-Si:H module but to also compliment their mechanical degradation analysis. Roughness indicators such as root means square (RMS) roughness and average roughness were acquired from line profiles. Measurements were taken with scanning probe microscope (SPM) and PeakForce Quantitative Nanomechanical (QNM) technique was used through the cross sectional area of the analyzed samples. The method was validated with adhesive force and deformation analyses; it was established that high roughness values result from mechanical degradation. Results from the roughness parameters and the mechanical degradation analysis were further observed from in situ measurements and these showed good compatibility. The benefit of this technique is that it provides a good procedure for the evaluation of mechanical degradation without destroying any part of the intrinsic layers in a-Si:H modules.

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来源期刊
CiteScore
8.60
自引率
0.00%
发文量
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审稿时长
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