{"title":"电子束诱导在功能金属氧化物上刻写纳米铁丝。","authors":"Florian Vollnhals, Tom Woolcot, Marie-Madeleine Walz, Steffen Seiler, Hans-Peter Steinrück, Geoff Thornton, Hubertus Marbach","doi":"10.1021/jp405640a","DOIUrl":null,"url":null,"abstract":"<p><p>Electron beam-induced surface activation (EBISA) has been used to grow wires of iron on rutile TiO<sub>2</sub>(110)-(1 × 1) in ultrahigh vacuum. The wires have a width down to ∼20 nm and hence have potential utility as interconnects on this dielectric substrate. Wire formation was achieved using an electron beam from a scanning electron microscope to activate the surface, which was subsequently exposed to Fe(CO)<sub>5</sub>. On the basis of scanning tunneling microscopy and Auger electron spectroscopy measurements, the activation mechanism involves electron beam-induced surface reduction and restructuring.</p>","PeriodicalId":520808,"journal":{"name":"The journal of physical chemistry. C, Nanomaterials and interfaces","volume":" ","pages":"17674-17679"},"PeriodicalIF":3.2000,"publicationDate":"2013-08-29","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"https://sci-hub-pdf.com/10.1021/jp405640a","citationCount":"23","resultStr":"{\"title\":\"Electron Beam-Induced Writing of Nanoscale Iron Wires on a Functional Metal Oxide.\",\"authors\":\"Florian Vollnhals, Tom Woolcot, Marie-Madeleine Walz, Steffen Seiler, Hans-Peter Steinrück, Geoff Thornton, Hubertus Marbach\",\"doi\":\"10.1021/jp405640a\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"<p><p>Electron beam-induced surface activation (EBISA) has been used to grow wires of iron on rutile TiO<sub>2</sub>(110)-(1 × 1) in ultrahigh vacuum. The wires have a width down to ∼20 nm and hence have potential utility as interconnects on this dielectric substrate. Wire formation was achieved using an electron beam from a scanning electron microscope to activate the surface, which was subsequently exposed to Fe(CO)<sub>5</sub>. On the basis of scanning tunneling microscopy and Auger electron spectroscopy measurements, the activation mechanism involves electron beam-induced surface reduction and restructuring.</p>\",\"PeriodicalId\":520808,\"journal\":{\"name\":\"The journal of physical chemistry. C, Nanomaterials and interfaces\",\"volume\":\" \",\"pages\":\"17674-17679\"},\"PeriodicalIF\":3.2000,\"publicationDate\":\"2013-08-29\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"https://sci-hub-pdf.com/10.1021/jp405640a\",\"citationCount\":\"23\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"The journal of physical chemistry. C, Nanomaterials and interfaces\",\"FirstCategoryId\":\"1\",\"ListUrlMain\":\"https://doi.org/10.1021/jp405640a\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"2013/8/5 0:00:00\",\"PubModel\":\"Epub\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"The journal of physical chemistry. C, Nanomaterials and interfaces","FirstCategoryId":"1","ListUrlMain":"https://doi.org/10.1021/jp405640a","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"2013/8/5 0:00:00","PubModel":"Epub","JCR":"","JCRName":"","Score":null,"Total":0}
Electron Beam-Induced Writing of Nanoscale Iron Wires on a Functional Metal Oxide.
Electron beam-induced surface activation (EBISA) has been used to grow wires of iron on rutile TiO2(110)-(1 × 1) in ultrahigh vacuum. The wires have a width down to ∼20 nm and hence have potential utility as interconnects on this dielectric substrate. Wire formation was achieved using an electron beam from a scanning electron microscope to activate the surface, which was subsequently exposed to Fe(CO)5. On the basis of scanning tunneling microscopy and Auger electron spectroscopy measurements, the activation mechanism involves electron beam-induced surface reduction and restructuring.
求助内容：
应助结果提醒方式：
京公网安备 11010802042870号
