{"title":"硅基异质集成三相光源。","authors":"C Bayram, R Liu","doi":"10.1109/IPCon.2017.8115994","DOIUrl":null,"url":null,"abstract":"<p><p>GaN emitters have historically been of hexagonal phase due to natural crystallization. Here we introduce a cubic phase GaN emitter technology that is polarization-free via cointegration on cheap and scalable CMOS-compatible Si(100) substrate.</p>","PeriodicalId":91695,"journal":{"name":"IEEE Photonics Conference : [proceedings]. IEEE Photonics Conference","volume":"2017 ","pages":"35-36"},"PeriodicalIF":0.0000,"publicationDate":"2017-01-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"https://sci-hub-pdf.com/10.1109/IPCon.2017.8115994","citationCount":"0","resultStr":"{\"title\":\"Cubic Phase Light Emitters Hetero-integrated on Silicon.\",\"authors\":\"C Bayram, R Liu\",\"doi\":\"10.1109/IPCon.2017.8115994\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"<p><p>GaN emitters have historically been of hexagonal phase due to natural crystallization. Here we introduce a cubic phase GaN emitter technology that is polarization-free via cointegration on cheap and scalable CMOS-compatible Si(100) substrate.</p>\",\"PeriodicalId\":91695,\"journal\":{\"name\":\"IEEE Photonics Conference : [proceedings]. IEEE Photonics Conference\",\"volume\":\"2017 \",\"pages\":\"35-36\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2017-01-01\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"https://sci-hub-pdf.com/10.1109/IPCon.2017.8115994\",\"citationCount\":\"0\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"IEEE Photonics Conference : [proceedings]. IEEE Photonics Conference\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/IPCon.2017.8115994\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"2017/11/23 0:00:00\",\"PubModel\":\"Epub\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"IEEE Photonics Conference : [proceedings]. IEEE Photonics Conference","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/IPCon.2017.8115994","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"2017/11/23 0:00:00","PubModel":"Epub","JCR":"","JCRName":"","Score":null,"Total":0}
Cubic Phase Light Emitters Hetero-integrated on Silicon.
GaN emitters have historically been of hexagonal phase due to natural crystallization. Here we introduce a cubic phase GaN emitter technology that is polarization-free via cointegration on cheap and scalable CMOS-compatible Si(100) substrate.
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