具有σ-受体和σ-供体取代基的环丙烷衍生物的几何和构象:理论和晶体结构数据库研究。

IF 1.9 3区 化学
Aurora J Cruz-Cabeza, Frank H Allen
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引用次数: 2

摘要

利用密度泛函理论(DFT)和剑桥结构数据库的平均键长和构象参数,研究了含σ-受体或σ-供体取代基的环丙烷环的结构。证实了σ-受体取代基(如卤素)产生环键长度正不对称,即远端键(取代点的对面)变长,两个近端键变短。这是由于电子密度从环丙烷的1e''轨道上撤出,这些轨道为远端键成键,为近端键反键。对于σ-供体取代基SiH(3)或Si(CH(3))(3), DFT和晶体结构数据显示出负环键长度不对称(远端键缩短,近端键延长),这是由于电子给能到4e'环轨道,远端键成键,近端键反键。结果还表明,-OH取代基诱导弱的正不对称,但甲基或氨基取代基的影响要么不存在,要么非常小,当然太小,无法用晶体结构信息来测量。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
Geometry and conformation of cyclopropane derivatives having σ-acceptor and σ-donor substituents: a theoretical and crystal structure database study.

The structures of cyclopropane rings which carry σ-acceptor or σ-donor substituents have been studied using density-functional theory (DFT), and mean bond lengths and conformational parameters retrieved from the Cambridge Structural Database. It is confirmed that σ-acceptor substituents, e.g. halogens, generate positive ring bond-length asymmetry in which there is lengthening of the distal bond (opposite to the point of substitution), and shorterning of the two vicinal bonds. This is due to withdrawal of electron density from the cyclopropane 1e'' orbitals, which are bonding for the distal bond and antibonding for the vicinal bonds. For σ-donor substituents such as SiH(3) or Si(CH(3))(3), the DFT and crystal structure data show negative ring bond-length asymmetry (distal bond shortened, vicinal bonds lengthened), owing to electron donation into the 4e' ring orbital, which are also bonding for the distal bond and antibonding for the vicinal bonds. The results also show that -OH substituents induce weak positive asymmetry, but that the effects of methyl or amino substituents are either non-existent or extremely small, certainly too small to measure using crystal structure information.

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来源期刊
自引率
5.30%
发文量
0
审稿时长
6-12 weeks
期刊介绍: Acta Crystallographica Section B: Structural Science, Crystal Engineering and Materials publishes scientific articles related to the structural science of compounds and materials in the widest sense. Knowledge of the arrangements of atoms, including their temporal variations and dependencies on temperature and pressure, is often the key to understanding physical and chemical phenomena and is crucial for the design of new materials and supramolecular devices. Acta Crystallographica B is the forum for the publication of such contributions. Scientific developments based on experimental studies as well as those based on theoretical approaches, including crystal-structure prediction, structure-property relations and the use of databases of crystal structures, are published.
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