低压等离子体灭菌过程中气体成分对孢子死亡率和腐蚀的影响。

S Lerouge, M R Wertheimer, R Marchand, M Tabrizian, L Yahia
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引用次数: 166

摘要

这项工作的目的是研究低温气体等离子体灭菌的可能机制:等离子体破坏孢子与合成聚合物的蚀刻进行了比较。将枯草芽孢杆菌孢子接种于玻璃瓶底部,并接受不同的等离子体气体成分(O(2), O(2)/Ar, O(2)/H(2), CO(2)和O(2)/CF(4)),所有这些都已知会腐蚀聚合物。O(2)/CF(4)等离子体表现出比所有其他气体或气体混合物更高的效率,在7.5分钟内降低了5倍以上,而纯氧降低了2倍。扫描电镜检查显示,暴露于等离子体30分钟后,孢子明显蚀刻,但不完全蚀刻。我们根据其形态和复杂的涂层结构推测其与合成聚合物的耐蚀性。与所谓的内部等离子体相比,Sterrad(R)灭菌倾向于增加观察到的孢子的大小;化学修饰(氧化),而不是蚀刻,被认为是Sterrad(R)的杀菌机制。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
Effect of gas composition on spore mortality and etching during low-pressure plasma sterilization.

The aim of this work was to investigate possible mechanisms of sterilization by low-temperature gas plasma: spore destruction by plasma is compared with etching of synthetic polymers. Bacillus subtilis spores were inoculated at the bottom of glass vials and subjected to different plasma gas compositions (O(2), O(2)/Ar, O(2)/H(2), CO(2), and O(2)/CF(4)), all known to etch polymers. O(2)/CF(4) plasma exhibited much higher efficacy than all other gases or gas mixtures tested, with a more than 5 log decrease in 7.5 min, compared with a 2 log decrease with pure oxygen. Examination by scanning electron microscopy showed that spores were significantly etched after 30 min of plasma exposure, but not completely. We speculate about their etch resistance compared with that of synthetic polymers on the basis of their morphology and complex coating structure. In contrast to so-called in-house plasma, sterilization by Sterrad(R) tended to increase the observed spores' size; chemical modification (oxidation), rather than etching, is believed to be the sterilization mechanism of Sterrad(R).

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