{"title":"化学成分定制Sm3+/Ce4+共掺杂CaCu3Ti4O12陶瓷,以改善微电子器件的介电性能","authors":"M. Ehthishamul Haque, M. Jose","doi":"10.1016/j.molstruc.2026.145649","DOIUrl":null,"url":null,"abstract":"<div><div>This study presents the solid-state synthesis of Ca<sub>1-x</sub>Sm<sub>x</sub>Ce<sub>x</sub>Cu<sub>3</sub>Ti<sub>4</sub>O<sub>12</sub> (<em>x</em> = 0 to 0.09) ceramics, achieving high dielectric permittivity (ε′ ∼17,937 at 1 kHz) and low loss (tan δ ∼0.250) through Sm<sup>3+</sup>/Ce<sup>4+</sup> co-doping. XRD confirmed phase purity, while Rietveld refinement provided detailed structural insights. XPS verified oxidation states, and SEM revealed reduced in grain size with doping. The <em>x</em> = 0.09 sample exhibited excellent frequency stability, with ε′ ∼12,838 and tan δ ∼0.084 at 10 kHz. Nyquist analysis showed high grain boundary resistance (R<sub>gb</sub> = 1.13×10<sup>6</sup> Ω) and an activation energy of 0.489 eV, suggesting a correlation between enhanced R<sub>gb</sub> and reduced tan δ. The colossal dielectric response is attributed to the internal barrier layer capacitor (IBLC) mechanism, in which insulating grain boundaries and conductive grains contribute to the high ε′. These findings demonstrate that Sm<sup>3+</sup>/Ce<sup>4+</sup> co-doping effectively optimizes dielectric properties, making these ceramics promising for capacitive applications.</div></div>","PeriodicalId":16414,"journal":{"name":"Journal of Molecular Structure","volume":"1360 ","pages":"Article 145649"},"PeriodicalIF":4.9000,"publicationDate":"2026-05-15","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":"{\"title\":\"Chemical composition tailored Sm3+/Ce4+ co–doped CaCu3Ti4O12 ceramics to improve dielectric properties for microelectronic devices\",\"authors\":\"M. Ehthishamul Haque, M. Jose\",\"doi\":\"10.1016/j.molstruc.2026.145649\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"<div><div>This study presents the solid-state synthesis of Ca<sub>1-x</sub>Sm<sub>x</sub>Ce<sub>x</sub>Cu<sub>3</sub>Ti<sub>4</sub>O<sub>12</sub> (<em>x</em> = 0 to 0.09) ceramics, achieving high dielectric permittivity (ε′ ∼17,937 at 1 kHz) and low loss (tan δ ∼0.250) through Sm<sup>3+</sup>/Ce<sup>4+</sup> co-doping. XRD confirmed phase purity, while Rietveld refinement provided detailed structural insights. XPS verified oxidation states, and SEM revealed reduced in grain size with doping. The <em>x</em> = 0.09 sample exhibited excellent frequency stability, with ε′ ∼12,838 and tan δ ∼0.084 at 10 kHz. Nyquist analysis showed high grain boundary resistance (R<sub>gb</sub> = 1.13×10<sup>6</sup> Ω) and an activation energy of 0.489 eV, suggesting a correlation between enhanced R<sub>gb</sub> and reduced tan δ. The colossal dielectric response is attributed to the internal barrier layer capacitor (IBLC) mechanism, in which insulating grain boundaries and conductive grains contribute to the high ε′. These findings demonstrate that Sm<sup>3+</sup>/Ce<sup>4+</sup> co-doping effectively optimizes dielectric properties, making these ceramics promising for capacitive applications.</div></div>\",\"PeriodicalId\":16414,\"journal\":{\"name\":\"Journal of Molecular Structure\",\"volume\":\"1360 \",\"pages\":\"Article 145649\"},\"PeriodicalIF\":4.9000,\"publicationDate\":\"2026-05-15\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"0\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"Journal of Molecular Structure\",\"FirstCategoryId\":\"92\",\"ListUrlMain\":\"https://www.sciencedirect.com/science/article/pii/S0022286026004151\",\"RegionNum\":2,\"RegionCategory\":\"化学\",\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"2026/2/10 0:00:00\",\"PubModel\":\"Epub\",\"JCR\":\"Q2\",\"JCRName\":\"CHEMISTRY, PHYSICAL\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"Journal of Molecular Structure","FirstCategoryId":"92","ListUrlMain":"https://www.sciencedirect.com/science/article/pii/S0022286026004151","RegionNum":2,"RegionCategory":"化学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"2026/2/10 0:00:00","PubModel":"Epub","JCR":"Q2","JCRName":"CHEMISTRY, PHYSICAL","Score":null,"Total":0}
Chemical composition tailored Sm3+/Ce4+ co–doped CaCu3Ti4O12 ceramics to improve dielectric properties for microelectronic devices
This study presents the solid-state synthesis of Ca1-xSmxCexCu3Ti4O12 (x = 0 to 0.09) ceramics, achieving high dielectric permittivity (ε′ ∼17,937 at 1 kHz) and low loss (tan δ ∼0.250) through Sm3+/Ce4+ co-doping. XRD confirmed phase purity, while Rietveld refinement provided detailed structural insights. XPS verified oxidation states, and SEM revealed reduced in grain size with doping. The x = 0.09 sample exhibited excellent frequency stability, with ε′ ∼12,838 and tan δ ∼0.084 at 10 kHz. Nyquist analysis showed high grain boundary resistance (Rgb = 1.13×106 Ω) and an activation energy of 0.489 eV, suggesting a correlation between enhanced Rgb and reduced tan δ. The colossal dielectric response is attributed to the internal barrier layer capacitor (IBLC) mechanism, in which insulating grain boundaries and conductive grains contribute to the high ε′. These findings demonstrate that Sm3+/Ce4+ co-doping effectively optimizes dielectric properties, making these ceramics promising for capacitive applications.
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