A simulation study on optimizing the self-heating and hot carrier effects using heterodielectric buried-oxide FinFETs

This paper analyses the performance of a new fin field-effect transistor (FinFET) for two undesirable effects, such as self-heating and hot carrier effects. Two effects often degrade the device performance. This paper proposes a new FinFET architecture as dual gate dielectrics heterodielectric buried-oxide (HDB) FinFET. The HDB consists of SiO₂ and HfO₂ dielectrics, placed laterally. The use of HfO₂ with SiO₂ in the buried-oxide (BOX) increases the thermal conductivity, due to which the introduced structure demonstrates less self-heating effect on device characteristics. Similarly, the incorporation of HfO₂ beneath the drain lowers the band gap narrowing in the channel\(/\)drain region, resulting in reduced hot carrier degradation effect. To analyse the performance, the self-heating effect and the hot carrier effect is compared between the conventional and HDB FinFET. The proposed HDB FinFET is found to be better than the conventional FinFET and hence, a detailed analysis on self-heating and the hot carrier effects is performed by varying the different dimensions of the BOX, fin and work function of gate material.