溶液浓度对喷雾热解法制备SnO2:F薄膜结构、形貌、光学和电学性能的影响

IF 1.4 4区 化学 Q4 PHYSICS, ATOMIC, MOLECULAR & CHEMICAL
L. Abboura, A. Djelloul, Y. Bakha, M. Guezzoul, A. Kanagaraj, M. Adnane
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引用次数: 0

摘要

采用喷雾热解法将掺氟二氧化锡(SnO2:F)薄膜沉积在玻璃衬底上。采用各种表征方法研究了溶液浓度对SnO2:F薄膜结构、形态和光学性能的影响。所有薄膜均表现为方形金红石结构,在(110)平面上优先取向,随着溶液浓度的增加逐渐向(211)平面转变。SnO2:F薄膜的平均晶粒尺寸随溶液浓度的增加而减小,为40.29 ~ 38.05 nm。原子力显微镜(AFM)分析显示,随着溶液浓度的增加,晶粒分布明显改善,表面压力相应增加,粗糙度降低。所得样品在70 ~ 82之间均具有较高的透明度%. The SnO2:F (0.4 mol/L) film has the best transparency (≈82%). The band gap values of SnO2:F films with different solution concentrations (0.2, 0.3, and 0.4 mol/L) are 3.84, 3.93 and 3.97 eV respectively, with a high band gap of 3.97 eV for the SnO2:F (0.4 mol/L) films. Hot probe studies reveal that all films exhibit n-type conductivity. The lowest resistivity of 8.4 × 10–4 Ohm cm was found for films deposited at 0.4 mol/L. The figure of merit (\({{\phi }_{{{\text{TC}}}}}\)) of SnO2:F thin films revealed a maximum value of about 9.757 × 10–3 Ohm–1 at the wavelength of 500 nm. These results suggest that SnO2:F films fabricated by spray pyrolysis can be considered effective candidates for integration into optoelectronic devices, particularly as transparent conductive layers in photovoltaic applications.
本文章由计算机程序翻译,如有差异,请以英文原文为准。

Effect of Solution Concentrations on the Structural, Morphological, Optical, and Electrical Properties of SnO2:F Thin Films Prepared by Spray Pyrolysis Method

Effect of Solution Concentrations on the Structural, Morphological, Optical, and Electrical Properties of SnO2:F Thin Films Prepared by Spray Pyrolysis Method

Fluorine-doped tin dioxide (SnO2:F) films were deposited onto glass substrates using a facile spray pyrolysis method. The effect of solution concentrations on the structural, morphological and optical properties of SnO2:F films is investigated using various characterization studies. All films exhibited tetragonal rutile structures with a preferred orientation in the (110) plane, which changes to the (211) plane gradually with increasing solution concentration. The average crystallite size of SnO2:F films decreased as the solution concentration increased, ranging from 40.29 to 38.05 nm. Atomic Force Microscopy (AFM) analyses revealed a marked improvement in grain distribution with increasing solution concentration, accompanied by a corresponding enhancement in surface pressure and decreased roughness. All the regions, produced samples exhibited high transparency from 70 to 82%. The SnO2:F (0.4 mol/L) film has the best transparency (≈82%). The band gap values of SnO2:F films with different solution concentrations (0.2, 0.3, and 0.4 mol/L) are 3.84, 3.93 and 3.97 eV respectively, with a high band gap of 3.97 eV for the SnO2:F (0.4 mol/L) films. Hot probe studies reveal that all films exhibit n-type conductivity. The lowest resistivity of 8.4 × 10–4 Ohm cm was found for films deposited at 0.4 mol/L. The figure of merit (\({{\phi }_{{{\text{TC}}}}}\)) of SnO2:F thin films revealed a maximum value of about 9.757 × 10–3 Ohm–1 at the wavelength of 500 nm. These results suggest that SnO2:F films fabricated by spray pyrolysis can be considered effective candidates for integration into optoelectronic devices, particularly as transparent conductive layers in photovoltaic applications.

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来源期刊
Russian Journal of Physical Chemistry B
Russian Journal of Physical Chemistry B 化学-物理:原子、分子和化学物理
CiteScore
2.20
自引率
71.40%
发文量
106
审稿时长
4-8 weeks
期刊介绍: Russian Journal of Physical Chemistry B: Focus on Physics is a journal that publishes studies in the following areas: elementary physical and chemical processes; structure of chemical compounds, reactivity, effect of external field and environment on chemical transformations; molecular dynamics and molecular organization; dynamics and kinetics of photoand radiation-induced processes; mechanism of chemical reactions in gas and condensed phases and at interfaces; chain and thermal processes of ignition, combustion and detonation in gases, two-phase and condensed systems; shock waves; new physical methods of examining chemical reactions; and biological processes in chemical physics.
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