Manipulation of valley polarization and anomalous valley Hall effect in monolayer ferrovalley AgMoP2S6

Due to the role of the valley as an information carriers, two-dimensional valleytronics materials have broad prospects in information storage in the future. However, materials with intrinsic valley polarization are rare. In our work, using first-principles calculations, we propose a valleytronics material monolayer (ML) AgMoP₂S₆ with a ferromagnetic(FM) ground state. The ferromagnetic exchange interaction breaks the time-reversal symmetry, which results in a spontaneous valley polarization of 78 meV at the K/-K points on the valence band under the action of strong SOC. The valley polarization can be tuned by biaxial strain and Hubbard U, and when the tensile strain exceeds 4 % and U exceeds 2 eV, valley polarization also appears in the conduction band. Under the action of an in-plane electric field, the breaking of valley degeneracy makes the appearance of anomalous valley Hall effect (AVHE) effect a possibility. ML AgMoP₂S₆ is an ideal valleytronics material.