ZnTe空穴传输层增强ZnO/(Bi,Sb)2Se3短波红外探测器的性能

IF 7.2 2区 材料科学 Q1 MATERIALS SCIENCE, MULTIDISCIPLINARY
Ruisi Gao, Feifan Yang, Liang Li, Ling Lin, Lin Zhu, Jinian Hao, Chuanhao Li, Shuo Chen, Guangzu Zhang, Kanghua Li
{"title":"ZnTe空穴传输层增强ZnO/(Bi,Sb)2Se3短波红外探测器的性能","authors":"Ruisi Gao,&nbsp;Feifan Yang,&nbsp;Liang Li,&nbsp;Ling Lin,&nbsp;Lin Zhu,&nbsp;Jinian Hao,&nbsp;Chuanhao Li,&nbsp;Shuo Chen,&nbsp;Guangzu Zhang,&nbsp;Kanghua Li","doi":"10.1002/adom.202501610","DOIUrl":null,"url":null,"abstract":"<p>Infrared photodetectors based on (Bi,Sb)<sub>2</sub>Se<sub>3</sub> alloys have attracted considerable attention owing to their tunable bandgaps and high carrier mobility, making them promising candidates for broadband detection. However, their performance is hindered by high dark current density and inefficient carrier extraction. Herein, ZnTe is introduced as a hole-transport layer (HTL) to reconfigure the band structure and fabricate a high-performance ZnO/(Bi,Sb)<sub>2</sub>Se<sub>3</sub>/ZnTe photodetector. By systematically tuning the ZnTe HTL thickness, a 53% enhancement in EQE (16.2% at 1300 nm) and a 50% reduction in dark current density (97.4 µA cm<sup>−2</sup>, at −0.5 V) are achieved compared to HTL-free devices. SCAPS simulation elucidates that the designed (Bi,Sb)<sub>2</sub>Se<sub>3</sub>/ZnTe heterojunction effectively suppresses electron backflow while enhancing hole extraction, thereby boosting performance. Therefore, the optimized device exhibits a notably fast response time (12/107.5 ns rise/fall) and a wide linear dynamic range (LDR, 96 dB). Additionally, unencapsulated devices retain 97.7% of their initial performance after 322 h of operating at 90 °C and withstand extreme annealing at 150°C, surpassing many state-of-the-art detectors. This approach provides a scalable, low-cost, and eco-friendly strategy for developing high-performance, high-speed, and high-stability infrared photodetection systems.</p>","PeriodicalId":116,"journal":{"name":"Advanced Optical Materials","volume":"13 28","pages":""},"PeriodicalIF":7.2000,"publicationDate":"2025-08-11","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":"{\"title\":\"Boosting Performance of ZnO/(Bi,Sb)2Se3 Short-Wavelength Infrared Photodetector via ZnTe Hole-Transport Layer\",\"authors\":\"Ruisi Gao,&nbsp;Feifan Yang,&nbsp;Liang Li,&nbsp;Ling Lin,&nbsp;Lin Zhu,&nbsp;Jinian Hao,&nbsp;Chuanhao Li,&nbsp;Shuo Chen,&nbsp;Guangzu Zhang,&nbsp;Kanghua Li\",\"doi\":\"10.1002/adom.202501610\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"<p>Infrared photodetectors based on (Bi,Sb)<sub>2</sub>Se<sub>3</sub> alloys have attracted considerable attention owing to their tunable bandgaps and high carrier mobility, making them promising candidates for broadband detection. However, their performance is hindered by high dark current density and inefficient carrier extraction. Herein, ZnTe is introduced as a hole-transport layer (HTL) to reconfigure the band structure and fabricate a high-performance ZnO/(Bi,Sb)<sub>2</sub>Se<sub>3</sub>/ZnTe photodetector. By systematically tuning the ZnTe HTL thickness, a 53% enhancement in EQE (16.2% at 1300 nm) and a 50% reduction in dark current density (97.4 µA cm<sup>−2</sup>, at −0.5 V) are achieved compared to HTL-free devices. SCAPS simulation elucidates that the designed (Bi,Sb)<sub>2</sub>Se<sub>3</sub>/ZnTe heterojunction effectively suppresses electron backflow while enhancing hole extraction, thereby boosting performance. Therefore, the optimized device exhibits a notably fast response time (12/107.5 ns rise/fall) and a wide linear dynamic range (LDR, 96 dB). Additionally, unencapsulated devices retain 97.7% of their initial performance after 322 h of operating at 90 °C and withstand extreme annealing at 150°C, surpassing many state-of-the-art detectors. This approach provides a scalable, low-cost, and eco-friendly strategy for developing high-performance, high-speed, and high-stability infrared photodetection systems.</p>\",\"PeriodicalId\":116,\"journal\":{\"name\":\"Advanced Optical Materials\",\"volume\":\"13 28\",\"pages\":\"\"},\"PeriodicalIF\":7.2000,\"publicationDate\":\"2025-08-11\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"0\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"Advanced Optical Materials\",\"FirstCategoryId\":\"88\",\"ListUrlMain\":\"https://advanced.onlinelibrary.wiley.com/doi/10.1002/adom.202501610\",\"RegionNum\":2,\"RegionCategory\":\"材料科学\",\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"Q1\",\"JCRName\":\"MATERIALS SCIENCE, MULTIDISCIPLINARY\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"Advanced Optical Materials","FirstCategoryId":"88","ListUrlMain":"https://advanced.onlinelibrary.wiley.com/doi/10.1002/adom.202501610","RegionNum":2,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"Q1","JCRName":"MATERIALS SCIENCE, MULTIDISCIPLINARY","Score":null,"Total":0}
引用次数: 0

摘要

基于(Bi,Sb)2Se3合金的红外光电探测器由于其可调谐的带隙和高载流子迁移率而引起了广泛的关注,使其成为宽带探测的有希望的候选者。然而,它们的性能受到暗电流密度高和载流子提取效率低的制约。本文将ZnO/(Bi,Sb)2Se3/ZnTe光电探测器作为空穴传输层(HTL)引入ZnO/(Bi,Sb)2Se3/ZnTe光电探测器。通过系统地调整ZnTe HTL厚度,与无html器件相比,EQE提高了53%(在1300 nm时提高了16.2%),暗电流密度降低了50%(在- 0.5 V时降低了97.4 μ a cm - 2)。SCAPS仿真结果表明,所设计的(Bi,Sb)2Se3/ZnTe异质结有效抑制了电子回流,同时增强了空穴提取,从而提高了性能。因此,优化后的器件具有显著的快速响应时间(12/107.5 ns上升/下降)和宽线性动态范围(LDR, 96 dB)。此外,未封装的器件在90°C下工作322小时后仍能保持97.7%的初始性能,并能承受150°C的极端退火,超过了许多最先进的探测器。这种方法为开发高性能、高速和高稳定性的红外光探测系统提供了一种可扩展、低成本和环保的策略。
本文章由计算机程序翻译,如有差异,请以英文原文为准。

Boosting Performance of ZnO/(Bi,Sb)2Se3 Short-Wavelength Infrared Photodetector via ZnTe Hole-Transport Layer

Boosting Performance of ZnO/(Bi,Sb)2Se3 Short-Wavelength Infrared Photodetector via ZnTe Hole-Transport Layer

Infrared photodetectors based on (Bi,Sb)2Se3 alloys have attracted considerable attention owing to their tunable bandgaps and high carrier mobility, making them promising candidates for broadband detection. However, their performance is hindered by high dark current density and inefficient carrier extraction. Herein, ZnTe is introduced as a hole-transport layer (HTL) to reconfigure the band structure and fabricate a high-performance ZnO/(Bi,Sb)2Se3/ZnTe photodetector. By systematically tuning the ZnTe HTL thickness, a 53% enhancement in EQE (16.2% at 1300 nm) and a 50% reduction in dark current density (97.4 µA cm−2, at −0.5 V) are achieved compared to HTL-free devices. SCAPS simulation elucidates that the designed (Bi,Sb)2Se3/ZnTe heterojunction effectively suppresses electron backflow while enhancing hole extraction, thereby boosting performance. Therefore, the optimized device exhibits a notably fast response time (12/107.5 ns rise/fall) and a wide linear dynamic range (LDR, 96 dB). Additionally, unencapsulated devices retain 97.7% of their initial performance after 322 h of operating at 90 °C and withstand extreme annealing at 150°C, surpassing many state-of-the-art detectors. This approach provides a scalable, low-cost, and eco-friendly strategy for developing high-performance, high-speed, and high-stability infrared photodetection systems.

求助全文
通过发布文献求助,成功后即可免费获取论文全文。 去求助
来源期刊
Advanced Optical Materials
Advanced Optical Materials MATERIALS SCIENCE, MULTIDISCIPLINARY-OPTICS
CiteScore
13.70
自引率
6.70%
发文量
883
审稿时长
1.5 months
期刊介绍: Advanced Optical Materials, part of the esteemed Advanced portfolio, is a unique materials science journal concentrating on all facets of light-matter interactions. For over a decade, it has been the preferred optical materials journal for significant discoveries in photonics, plasmonics, metamaterials, and more. The Advanced portfolio from Wiley is a collection of globally respected, high-impact journals that disseminate the best science from established and emerging researchers, aiding them in fulfilling their mission and amplifying the reach of their scientific discoveries.
×
引用
GB/T 7714-2015
复制
MLA
复制
APA
复制
导出至
BibTeX EndNote RefMan NoteFirst NoteExpress
×
提示
您的信息不完整,为了账户安全,请先补充。
现在去补充
×
提示
您因"违规操作"
具体请查看互助需知
我知道了
×
提示
确定
请完成安全验证×
copy
已复制链接
快去分享给好友吧!
我知道了
右上角分享
点击右上角分享
0
联系我们:info@booksci.cn Book学术提供免费学术资源搜索服务,方便国内外学者检索中英文文献。致力于提供最便捷和优质的服务体验。 Copyright © 2023 布克学术 All rights reserved.
京ICP备2023020795号-1
ghs 京公网安备 11010802042870号
Book学术文献互助
Book学术文献互助群
群 号:604180095
Book学术官方微信