硫系铼ReS2-xSex (x = 0,1,2)单晶组分依赖的光电特性

Atriy B. Ghetiya , Sunil H. Chaki , Jiten P. Tailor , Ankurkumar J. Khimani , Sandip V. Bhatt , M.P. Deshpande
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引用次数: 0

摘要

近年来,铼基硫属化合物作为光电子应用的有前途的材料受到了关注。研究了生长的硫系铼ReS2-xSex (x = 0,1,2)单晶在不同入射波长和0和+3 V偏置条件下的光响应。采用x射线光电子能谱、扫描电子显微镜和透射电子显微镜来评估晶体结构和表面质量,以用于光探测应用。光探测特性表明,在光电流范围为10−9 A的开关应用中具有良好的潜力。值得注意的是,ReS2-xSex (x = 0,1,2)的光响应明显增强,响应率为4.78 × 10−3 A/W,检出率为9.16 × 109 Jones,响应时间为0.2 s。这些值证明了这些单晶在先进光电应用中的潜力。
本文章由计算机程序翻译,如有差异,请以英文原文为准。

Composition-dependent opto electronic characteristics of rhenium chalcogenide ReS2-xSex (x = 0, 1, 2) single crystals

Composition-dependent opto electronic characteristics of rhenium chalcogenide ReS2-xSex (x = 0, 1, 2) single crystals
In recent years, Rhenium-based chalcogenides have gained traction as promising materials for optoelectronic applications. The photoresponse of the as-grown rhenium chalcogenide ReS2-xSex (x = 0, 1, 2) single crystals was investigated under varying incident wavelengths and bias conditions of 0 and +3 V. X-ray photoelectron spectroscopy, scanning electron microscopy, and transmission electron microscopy were performed to assess the crystal structure and surface quality for photodetection applications. The photodetection properties indicate favorable potential for switching applications within the photocurrent range of 10−9 A. Notably, the photoresponse of ReS2-xSex (x = 0, 1, 2) exhibited significant enhancement, achieving responsivity of 4.78 × 10−3 A/W, detectivity of 9.16 × 109 Jones, and response time of <0.2 s. These values demonstrate the potential of these single crystals for advanced optoelectronic applications.
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