Growth of AlGaInSbP/InP(100) Heterostructures from High-Temperature Solution via Temperature-Gradient Zone Recrystallization and Their Properties

AlGaInSbP quinary solid solutions have been synthesized for the first time on InP substrates via temperature-gradient zone recrystallization. We have carried out thermodynamic analysis of the solid solutions, determined their composition, assessed their structural perfection, and measured their photoluminescence spectra. Thermodynamic analysis of the Al_xGa_yIn_1–x–ySb_zP_1–z solid solutions has shown that they have constant lattice parameter in the ranges 0.01 ≤ x ≤ 0.3, 0.0 ≤ y ≤ 1.0, and 0.0 ≤ z ≤ 0.6. In the composition region 0.0 ≤ x ≤ 0.1, 0.0 ≤ y ≤ 1.0, and 0.2 ≤ z ≤ 0.7, the solid solutions are prone to spinodal decomposition. Using linear interpolation methods, we calculated parameters of heterophase equilibria in the Al_xGa_yIn_1–x–ySb_zP_1–z–InP system in the regular solution approximation and located the composition regions of direct (Г₈ → Г₅) transitions (x = 0.1, 0.0 ≤ y ≤ 0.9, and 0.0 ≤ z ≤ 1.0) and indirect (Г₈ → X₅) transitions (x = 0.1, 0.5 ≤ y ≤ 0.9, and 0.0 ≤ z ≤ 0.7). AlGaInSbP epitaxial layers grown at temperatures in the range 773 ≤ T ≤ 973 K, temperature gradients in the range 10 ≤ G ≤ 80 K/cm, and molten zone thicknesses in the range 100 ≤ l ≤ 300 μm had a surface roughness of ~6 nm and high structural perfection (B_H/2 ≈ 10″).