用于SWIR应用的InAsP和InGaAs光电探测器的比较分析:光反射方法和模拟

IF 0.9 4区 物理与天体物理 Q3 PHYSICS, MULTIDISCIPLINARY
S. Bahareh Seyedein Ardebili, Behnam Zeinalvand Farzin, Jong Su Kim, Sang Jun Lee
{"title":"用于SWIR应用的InAsP和InGaAs光电探测器的比较分析:光反射方法和模拟","authors":"S. Bahareh Seyedein Ardebili,&nbsp;Behnam Zeinalvand Farzin,&nbsp;Jong Su Kim,&nbsp;Sang Jun Lee","doi":"10.1007/s40042-025-01321-w","DOIUrl":null,"url":null,"abstract":"<div><p>This study investigates the performance of InGaAs and InAsP photodetectors in the short-wave infrared spectrum using photoreflectance spectroscopy and computational simulations. InAsP photodetectors with p-i-n homojunction structures grown on InP substrates exhibited higher quantum efficiency than their InGaAs counterparts. Photoreflectance spectroscopy, a contactless characterization technique, revealed a 38% higher quantum efficiency for InAsP photodetectors, attributable to longer carrier lifetimes and enhanced crystalline quality. Simulations validated these findings, linking the improved performance to reduced surface states and recombination rates in InAsP materials. Key insights from this work highlight the role of material properties, such as recombination mechanisms and capacitance, in influencing photodetector performance, emphasizing the potential of InAsP for advanced SWIR applications.</p></div>","PeriodicalId":677,"journal":{"name":"Journal of the Korean Physical Society","volume":"86 12","pages":"1148 - 1156"},"PeriodicalIF":0.9000,"publicationDate":"2025-03-18","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":"{\"title\":\"Comparative analysis of InAsP and InGaAs photodetectors for SWIR applications: photoreflectance approach and simulations\",\"authors\":\"S. Bahareh Seyedein Ardebili,&nbsp;Behnam Zeinalvand Farzin,&nbsp;Jong Su Kim,&nbsp;Sang Jun Lee\",\"doi\":\"10.1007/s40042-025-01321-w\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"<div><p>This study investigates the performance of InGaAs and InAsP photodetectors in the short-wave infrared spectrum using photoreflectance spectroscopy and computational simulations. InAsP photodetectors with p-i-n homojunction structures grown on InP substrates exhibited higher quantum efficiency than their InGaAs counterparts. Photoreflectance spectroscopy, a contactless characterization technique, revealed a 38% higher quantum efficiency for InAsP photodetectors, attributable to longer carrier lifetimes and enhanced crystalline quality. Simulations validated these findings, linking the improved performance to reduced surface states and recombination rates in InAsP materials. Key insights from this work highlight the role of material properties, such as recombination mechanisms and capacitance, in influencing photodetector performance, emphasizing the potential of InAsP for advanced SWIR applications.</p></div>\",\"PeriodicalId\":677,\"journal\":{\"name\":\"Journal of the Korean Physical Society\",\"volume\":\"86 12\",\"pages\":\"1148 - 1156\"},\"PeriodicalIF\":0.9000,\"publicationDate\":\"2025-03-18\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"0\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"Journal of the Korean Physical Society\",\"FirstCategoryId\":\"101\",\"ListUrlMain\":\"https://link.springer.com/article/10.1007/s40042-025-01321-w\",\"RegionNum\":4,\"RegionCategory\":\"物理与天体物理\",\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"Q3\",\"JCRName\":\"PHYSICS, MULTIDISCIPLINARY\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"Journal of the Korean Physical Society","FirstCategoryId":"101","ListUrlMain":"https://link.springer.com/article/10.1007/s40042-025-01321-w","RegionNum":4,"RegionCategory":"物理与天体物理","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"Q3","JCRName":"PHYSICS, MULTIDISCIPLINARY","Score":null,"Total":0}
引用次数: 0

摘要

本研究利用光反射光谱和计算模拟研究了InGaAs和InAsP光电探测器在短波红外光谱中的性能。在InP衬底上生长的具有p-i-n同结结构的InAsP光电探测器比其InGaAs对应物具有更高的量子效率。光反射光谱(一种非接触式表征技术)表明,由于载流子寿命更长和晶体质量提高,InAsP光电探测器的量子效率提高了38%。模拟验证了这些发现,将性能的提高与InAsP材料中表面状态的降低和复合率联系起来。这项工作的关键见解强调了材料特性(如重组机制和电容)在影响光电探测器性能方面的作用,强调了InAsP在高级SWIR应用中的潜力。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
Comparative analysis of InAsP and InGaAs photodetectors for SWIR applications: photoreflectance approach and simulations

This study investigates the performance of InGaAs and InAsP photodetectors in the short-wave infrared spectrum using photoreflectance spectroscopy and computational simulations. InAsP photodetectors with p-i-n homojunction structures grown on InP substrates exhibited higher quantum efficiency than their InGaAs counterparts. Photoreflectance spectroscopy, a contactless characterization technique, revealed a 38% higher quantum efficiency for InAsP photodetectors, attributable to longer carrier lifetimes and enhanced crystalline quality. Simulations validated these findings, linking the improved performance to reduced surface states and recombination rates in InAsP materials. Key insights from this work highlight the role of material properties, such as recombination mechanisms and capacitance, in influencing photodetector performance, emphasizing the potential of InAsP for advanced SWIR applications.

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来源期刊
Journal of the Korean Physical Society
Journal of the Korean Physical Society PHYSICS, MULTIDISCIPLINARY-
CiteScore
1.20
自引率
16.70%
发文量
276
审稿时长
5.5 months
期刊介绍: The Journal of the Korean Physical Society (JKPS) covers all fields of physics spanning from statistical physics and condensed matter physics to particle physics. The manuscript to be published in JKPS is required to hold the originality, significance, and recent completeness. The journal is composed of Full paper, Letters, and Brief sections. In addition, featured articles with outstanding results are selected by the Editorial board and introduced in the online version. For emphasis on aspect of international journal, several world-distinguished researchers join the Editorial board. High quality of papers may be express-published when it is recommended or requested.
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