Dynamics of Paramagnetic Centers in Hafnium Oxide during Electron-Beam Deposition

Hafnium oxide, possessing a high permittivity, is of interest for use as memristors in electronics. In this paper, a comparative analysis of the type and main characteristics of paramagnetic centers has, for the first time, been performed on a series of samples that underwent successive synthesis stages: from the initial target sample to the film on a substrate It has been established that the primary type of defects in the studied materials are oxygen vacancies with an unpaired electron (F\({}^{+}\) centers). It has been found that during the deposition of the target (crystalline hafnium oxide), the concentration of F\({}^{+}\) centers decreases, probably as a result of recharging. It has been established that in the deposited hafnium oxide film, the concentration of F\({}^{+}\) defects increases by an order of magnitude. The observed experimental fact is explained by the disordered (amorphous) structure of the film.