黑硅角反射的建模与实验研究

IF 0.4 4区物理与天体物理 Q4 PHYSICS, MULTIDISCIPLINARY

Journal of Contemporary Physics (Armenian Academy of Sciences) Pub Date : 2025-07-04 DOI:10.1134/S106833722570029X

G. Y. Ayvazyan, M. V. Katkov, L. M. Lakhoyan

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引用次数: 0

摘要

本文介绍了反应离子刻蚀形成的黑硅（b-Si）层的角反射分析结果。用传递矩阵法计算和实验测量证实了b-Si在60°的入射角下具有优异的抗反射性能。这确保了太阳能电池在宽角度范围内短路电流的稳定性，这对于白天和多云条件下固定光伏电站的高效运行尤为重要。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

Modeling and Experimental Study of Black Silicon Angular Reflection

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Modeling and Experimental Study of Black Silicon Angular Reflection

We present the results of angular reflection analysis of black silicon (b-Si) layers formed by reactive ion etching. Calculations using the transfer matrix method and experimental measurements confirm the excellent antireflective properties of b-Si at light incidence angles of up to 60°. This ensures the stability of the short-circuit current in solar cells across a wide angular range, which is particularly important for the efficient operation of stationary photovoltaic stations during daytime and under cloudy conditions.

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来源期刊

Journal of Contemporary Physics (Armenian Academy of Sciences) PHYSICS, MULTIDISCIPLINARY-

CiteScore

1.00

自引率

66.70%

发文量

审稿时长

6-12 weeks

期刊介绍： Journal of Contemporary Physics (Armenian Academy of Sciences) is a journal that covers all fields of modern physics. It publishes significant contributions in such areas of theoretical and applied science as interaction of elementary particles at superhigh energies, elementary particle physics, charged particle interactions with matter, physics of semiconductors and semiconductor devices, physics of condensed matter, radiophysics and radioelectronics, optics and quantum electronics, quantum size effects, nanophysics, sensorics, and superconductivity.