Photoluminescence of Structures on Porous Silicon Obtained by Electrochemical Etching with Exposure to Light in Different Spectral Regions

This work focuses on the effect of different additional irradiation sources on the optical properties of porous silicon. Samples were obtained using the standard electrochemical anodization (etching) technique in a hydrofluoric acid solution from monocrystalline silicon wafers. Differences were observed in the photoluminescence spectra of three series of samples subjected to different spectral irradiation. The results show that by using various types of additional light sources during the electrochemical etching process, the photoluminescence spectrum peak of porous silicon can be tuned within the wavelength range of 400–850 nm.