{"title":"不同剂量γ射线辐照下氮化镓薄膜黄带与缺陷态的关系","authors":"Kyoung Su Lee, Dong-Seok Kim, Eun Kyu Kim","doi":"10.1007/s40042-025-01394-7","DOIUrl":null,"url":null,"abstract":"<div><p>GaN epilayers grown on c-plane sapphire substrates were irradiated with different doses of <i>γ</i>-rays ranging from 300 to 3000 krad. From the photoluminescence (PL) measurement, the yellow PL (YL) intensity decreased with increasing the <i>γ</i>-ray irradiation dose. From the deep level transient spectroscopy (DLTS), three defect states of E1, E2, and E5 levels with activation energies of 0.17 ± 0.02, 0.52 ± 0.01, and 0.97 ± 0.02 eV below the conduction band edge were found in the samples. The E1, E2, and E5 levels originated from the defects of nitrogen vacancy (<i>V</i><sub>N</sub>), nitrogen antisite (<i>N</i><sub>Ga</sub>), and interstitial nitrogen (<i>N</i><sub>i</sub>), respectively. With increasing <i>γ</i>-ray doses, the <i>N</i><sub>t</sub> value of <i>N</i><sub>Ga</sub> was increased, while the <i>N</i><sub>t</sub> values of <i>V</i><sub>N</sub>, <i>N</i><sub>i</sub>, <i>V</i><sub>Ga</sub>–<i>N</i><sub>i</sub> complex decreased. Therefore, it was suggested that the yellow PL band originated from the <i>V</i><sub>Ga</sub>–<i>N</i><sub>i</sub> complex.</p></div>","PeriodicalId":677,"journal":{"name":"Journal of the Korean Physical Society","volume":"87 1","pages":"79 - 85"},"PeriodicalIF":0.9000,"publicationDate":"2025-05-20","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":"{\"title\":\"A relation between yellow band and defect states of GaN epilayers during gamma-ray irradiation with different doses\",\"authors\":\"Kyoung Su Lee, Dong-Seok Kim, Eun Kyu Kim\",\"doi\":\"10.1007/s40042-025-01394-7\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"<div><p>GaN epilayers grown on c-plane sapphire substrates were irradiated with different doses of <i>γ</i>-rays ranging from 300 to 3000 krad. From the photoluminescence (PL) measurement, the yellow PL (YL) intensity decreased with increasing the <i>γ</i>-ray irradiation dose. From the deep level transient spectroscopy (DLTS), three defect states of E1, E2, and E5 levels with activation energies of 0.17 ± 0.02, 0.52 ± 0.01, and 0.97 ± 0.02 eV below the conduction band edge were found in the samples. The E1, E2, and E5 levels originated from the defects of nitrogen vacancy (<i>V</i><sub>N</sub>), nitrogen antisite (<i>N</i><sub>Ga</sub>), and interstitial nitrogen (<i>N</i><sub>i</sub>), respectively. With increasing <i>γ</i>-ray doses, the <i>N</i><sub>t</sub> value of <i>N</i><sub>Ga</sub> was increased, while the <i>N</i><sub>t</sub> values of <i>V</i><sub>N</sub>, <i>N</i><sub>i</sub>, <i>V</i><sub>Ga</sub>–<i>N</i><sub>i</sub> complex decreased. Therefore, it was suggested that the yellow PL band originated from the <i>V</i><sub>Ga</sub>–<i>N</i><sub>i</sub> complex.</p></div>\",\"PeriodicalId\":677,\"journal\":{\"name\":\"Journal of the Korean Physical Society\",\"volume\":\"87 1\",\"pages\":\"79 - 85\"},\"PeriodicalIF\":0.9000,\"publicationDate\":\"2025-05-20\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"0\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"Journal of the Korean Physical Society\",\"FirstCategoryId\":\"101\",\"ListUrlMain\":\"https://link.springer.com/article/10.1007/s40042-025-01394-7\",\"RegionNum\":4,\"RegionCategory\":\"物理与天体物理\",\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"Q3\",\"JCRName\":\"PHYSICS, MULTIDISCIPLINARY\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"Journal of the Korean Physical Society","FirstCategoryId":"101","ListUrlMain":"https://link.springer.com/article/10.1007/s40042-025-01394-7","RegionNum":4,"RegionCategory":"物理与天体物理","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"Q3","JCRName":"PHYSICS, MULTIDISCIPLINARY","Score":null,"Total":0}
A relation between yellow band and defect states of GaN epilayers during gamma-ray irradiation with different doses
GaN epilayers grown on c-plane sapphire substrates were irradiated with different doses of γ-rays ranging from 300 to 3000 krad. From the photoluminescence (PL) measurement, the yellow PL (YL) intensity decreased with increasing the γ-ray irradiation dose. From the deep level transient spectroscopy (DLTS), three defect states of E1, E2, and E5 levels with activation energies of 0.17 ± 0.02, 0.52 ± 0.01, and 0.97 ± 0.02 eV below the conduction band edge were found in the samples. The E1, E2, and E5 levels originated from the defects of nitrogen vacancy (VN), nitrogen antisite (NGa), and interstitial nitrogen (Ni), respectively. With increasing γ-ray doses, the Nt value of NGa was increased, while the Nt values of VN, Ni, VGa–Ni complex decreased. Therefore, it was suggested that the yellow PL band originated from the VGa–Ni complex.
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The Journal of the Korean Physical Society (JKPS) covers all fields of physics spanning from statistical physics and condensed matter physics to particle physics. The manuscript to be published in JKPS is required to hold the originality, significance, and recent completeness. The journal is composed of Full paper, Letters, and Brief sections. In addition, featured articles with outstanding results are selected by the Editorial board and introduced in the online version. For emphasis on aspect of international journal, several world-distinguished researchers join the Editorial board. High quality of papers may be express-published when it is recommended or requested.
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