Mokhtar Hjiri, Ramzi Dhahri, Fatemah M. Barakat, Giovanni Neri
{"title":"Sb2O3、Sb2O5和sb掺杂基电阻式气体传感器的研究进展","authors":"Mokhtar Hjiri, Ramzi Dhahri, Fatemah M. Barakat, Giovanni Neri","doi":"10.1007/s13538-025-01850-6","DOIUrl":null,"url":null,"abstract":"<div><p>Sb<sub>2</sub>O<sub>3</sub> and Sb<sub>2</sub>O<sub>5</sub> are semiconducting metal oxides which have been used for gas sensing purposes in pristine, decorated, and composite forms. Furthermore, Sb as dopant can be used as substitution element in various metal oxides, where creation of oxygen vacancies and lattice distortion, along with limitation of particle growth causes enhanced gas response. Herein, we have described the various aspects of sensing behavior of resistive sensors based on these materials in detail. Sb<sub>2</sub>O<sub>3</sub> with more stability has been more studied for gas sensing application relative to Sb<sub>2</sub>O<sub>5</sub>. Gas sensing temperature can be decreased to room-temperature using UV illumination or composite making with appropriate semiconducting materials such as conducting polymers. Sb as dopant can increased the conductivity and create oxygen vacancies inside of sensing material, hence increasing sensing performance. Details of sensing mechanism of Sb<sub>2</sub>O<sub>3</sub>, Sb<sub>2</sub>O<sub>5</sub>, and Sb-doped sensor are described and mainly related to the formation of Schottky barriers, heterojunctions, oxygen vacancies and increase of surface area.</p></div>","PeriodicalId":499,"journal":{"name":"Brazilian Journal of Physics","volume":"55 5","pages":""},"PeriodicalIF":1.7000,"publicationDate":"2025-07-14","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":"{\"title\":\"Sb2O3, Sb2O5, and Sb-doped Based Resistive Gas Sensors: A Review\",\"authors\":\"Mokhtar Hjiri, Ramzi Dhahri, Fatemah M. Barakat, Giovanni Neri\",\"doi\":\"10.1007/s13538-025-01850-6\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"<div><p>Sb<sub>2</sub>O<sub>3</sub> and Sb<sub>2</sub>O<sub>5</sub> are semiconducting metal oxides which have been used for gas sensing purposes in pristine, decorated, and composite forms. Furthermore, Sb as dopant can be used as substitution element in various metal oxides, where creation of oxygen vacancies and lattice distortion, along with limitation of particle growth causes enhanced gas response. Herein, we have described the various aspects of sensing behavior of resistive sensors based on these materials in detail. Sb<sub>2</sub>O<sub>3</sub> with more stability has been more studied for gas sensing application relative to Sb<sub>2</sub>O<sub>5</sub>. Gas sensing temperature can be decreased to room-temperature using UV illumination or composite making with appropriate semiconducting materials such as conducting polymers. Sb as dopant can increased the conductivity and create oxygen vacancies inside of sensing material, hence increasing sensing performance. Details of sensing mechanism of Sb<sub>2</sub>O<sub>3</sub>, Sb<sub>2</sub>O<sub>5</sub>, and Sb-doped sensor are described and mainly related to the formation of Schottky barriers, heterojunctions, oxygen vacancies and increase of surface area.</p></div>\",\"PeriodicalId\":499,\"journal\":{\"name\":\"Brazilian Journal of Physics\",\"volume\":\"55 5\",\"pages\":\"\"},\"PeriodicalIF\":1.7000,\"publicationDate\":\"2025-07-14\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"0\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"Brazilian Journal of Physics\",\"FirstCategoryId\":\"101\",\"ListUrlMain\":\"https://link.springer.com/article/10.1007/s13538-025-01850-6\",\"RegionNum\":4,\"RegionCategory\":\"物理与天体物理\",\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"Q2\",\"JCRName\":\"PHYSICS, MULTIDISCIPLINARY\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"Brazilian Journal of Physics","FirstCategoryId":"101","ListUrlMain":"https://link.springer.com/article/10.1007/s13538-025-01850-6","RegionNum":4,"RegionCategory":"物理与天体物理","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"Q2","JCRName":"PHYSICS, MULTIDISCIPLINARY","Score":null,"Total":0}
Sb2O3, Sb2O5, and Sb-doped Based Resistive Gas Sensors: A Review
Sb2O3 and Sb2O5 are semiconducting metal oxides which have been used for gas sensing purposes in pristine, decorated, and composite forms. Furthermore, Sb as dopant can be used as substitution element in various metal oxides, where creation of oxygen vacancies and lattice distortion, along with limitation of particle growth causes enhanced gas response. Herein, we have described the various aspects of sensing behavior of resistive sensors based on these materials in detail. Sb2O3 with more stability has been more studied for gas sensing application relative to Sb2O5. Gas sensing temperature can be decreased to room-temperature using UV illumination or composite making with appropriate semiconducting materials such as conducting polymers. Sb as dopant can increased the conductivity and create oxygen vacancies inside of sensing material, hence increasing sensing performance. Details of sensing mechanism of Sb2O3, Sb2O5, and Sb-doped sensor are described and mainly related to the formation of Schottky barriers, heterojunctions, oxygen vacancies and increase of surface area.
期刊介绍:
The Brazilian Journal of Physics is a peer-reviewed international journal published by the Brazilian Physical Society (SBF). The journal publishes new and original research results from all areas of physics, obtained in Brazil and from anywhere else in the world. Contents include theoretical, practical and experimental papers as well as high-quality review papers. Submissions should follow the generally accepted structure for journal articles with basic elements: title, abstract, introduction, results, conclusions, and references.