微led技术的转变标志着显示器的变革时刻

Q4 Engineering
Nag Patibandla
{"title":"微led技术的转变标志着显示器的变革时刻","authors":"Nag Patibandla","doi":"10.1002/msid.1606","DOIUrl":null,"url":null,"abstract":"<p><b>THE USE OF MICROLEDS (TINY LIGHT-EMITTING DIODES</b> of gallium nitride) as subpixels represents a significant advancement in display technology, offering improved luminance, energy efficiency, and color quality. This innovation unlocks new opportunities in high dynamic range in direct-view displays, while also enabling high brightness and wider viewing angle near-eye displays for augmented and mixed reality (AR/MR) applications. However, to fully realize this potential, several critical challenges must be addressed, particularly in the realms of pixel yield during die-transfer and laser-assisted or anisotropic conductive film (ACF) bonding, optical efficiency, and manufacturing costs.</p><p>The traditional fabrication methods for microLED displays involve the use of red, green, and blue (RGB) GaN LED dice epitaxially grown on sapphire (or silicon) wafers. It is worth noting that AlGaInP red dice grown on gallium arsenide (or silicon or germanium) substrates may be substituted. In these conventional approaches, arrays of dice are created on each wafer and subsequently transferred to a backplane through a series of complex steps involving multiple interposers. This intricate transfer process can lead to yield loss, necessitating the implementation of die repair measures or redundancy in the form of two sets of RGB dice, both of which contribute to higher manufacturing costs. Furthermore, as the die-size decreases to achieve cost efficiency, microLED efficiency tends to decline based on increased carrier loss at the sidewalls, ultimately limiting overall pixel efficiency.</p><p>Current display technologies predominantly use backplanes with thin-film transistors (TFT) on glass substrates, optimized for high-yield production in display fabrication facilities that handle large substrates. Transitioning these TFT production lines to accommodate high-resolution microLED backplanes required for AR/MR displays presents significant engineering hurdles that may not be financially sustainable. For instance, manufacturing AR/MR displays at 5,000 ppi entails producing millions of subpixels in a small area—a monumental engineering feat. A more viable solution for AR/MR displays may lie in using silicon complementary metal-oxide semiconductor (CMOS) backplanes. Some companies have already demonstrated silicon CMOS backplanes capable of achieving 3,000-ppi resolutions. The ongoing development of high-yield CMOS backplanes at larger sizes with resolutions exceeding 5,000 ppi is still in its nascent stages, but this holds promise for future advancements.</p><p>To foster a sustainable business model, it is essential to develop microLED display technology applicable to both direct-view and near-eye applications using processes and tools adaptable for both TFT on glass and silicon CMOS backplanes. The advancements in microLED display manufacturing are highlighted in this issue, which includes three articles focused on critical aspects of microLED manufacturing technology. Additionally, a fourth article discusses scaling OLED technology, showcasing the ongoing innovations in display manufacturing.</p><p>In the article “Laser-Assisted Bonding for MicroLED Modules in Head-Up Display Applications,” Wenya Tian et al. discuss a 3.8-inch, 1,280 × 1,024 ultrahigh-resolution, ultrahigh-brightness head-up display module that achieves a lighting yield exceeding 99.9 percent. The laser-assisted eutectic bonding used in assembling this display is shown to have improved photoelectric efficiency by 51.3 percent.</p><p>In the next article, “Enabling Next-Generation MicroLED Displays Through ACF-Based Bonding Solutions,” Hiroki Ozeki et al. describe the use of a novel particle-arrayed ACF specifically designed for microLED display applications. The methods used in this approach enable reliable, low-temperature bonding on ultra-small pads, addressing key manufacturing challenges in next-generation display technologies.</p><p>In the third article, “Novel Package Design Enhances Optical Efficiency of MicroLED Displays,” Naiwei Liu et al. used a high-refractive-index transparent resist to significantly enhance the light extraction efficiency of microLEDs. Additionally, a high-reflectivity white resin material combined with lens microstructures is adopted to converge the light from a wide viewing angle, increasing the brightness at the 0-degree viewing angle by approximately 53 percent.</p><p>In the final article, “Revolutionary MAX OLED Solution for Next-Generation OLED Displays,” Yu-Hsin Lin et al. addressed critical limitations of traditional RGB OLED patterning processes. It was shown that MAX OLED significantly improved aperture ratio, brightness, resolution, and display longevity. The precise angle-controlled deposition and pixelated encapsulation techniques protect sensitive OLED materials.</p><p>This shift toward microLED technology signifies a transformative moment in the future of displays, while advances in OLED display manufacturing continue to evolve with the potential to redefine performance standards across a variety of applications.</p>","PeriodicalId":52450,"journal":{"name":"Information Display","volume":"41 5","pages":""},"PeriodicalIF":0.0000,"publicationDate":"2025-09-23","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"https://sid.onlinelibrary.wiley.com/doi/epdf/10.1002/msid.1606","citationCount":"0","resultStr":"{\"title\":\"MicroLED Technology Shift Signifies a Transformative Moment in Displays\",\"authors\":\"Nag Patibandla\",\"doi\":\"10.1002/msid.1606\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"<p><b>THE USE OF MICROLEDS (TINY LIGHT-EMITTING DIODES</b> of gallium nitride) as subpixels represents a significant advancement in display technology, offering improved luminance, energy efficiency, and color quality. This innovation unlocks new opportunities in high dynamic range in direct-view displays, while also enabling high brightness and wider viewing angle near-eye displays for augmented and mixed reality (AR/MR) applications. However, to fully realize this potential, several critical challenges must be addressed, particularly in the realms of pixel yield during die-transfer and laser-assisted or anisotropic conductive film (ACF) bonding, optical efficiency, and manufacturing costs.</p><p>The traditional fabrication methods for microLED displays involve the use of red, green, and blue (RGB) GaN LED dice epitaxially grown on sapphire (or silicon) wafers. It is worth noting that AlGaInP red dice grown on gallium arsenide (or silicon or germanium) substrates may be substituted. In these conventional approaches, arrays of dice are created on each wafer and subsequently transferred to a backplane through a series of complex steps involving multiple interposers. This intricate transfer process can lead to yield loss, necessitating the implementation of die repair measures or redundancy in the form of two sets of RGB dice, both of which contribute to higher manufacturing costs. Furthermore, as the die-size decreases to achieve cost efficiency, microLED efficiency tends to decline based on increased carrier loss at the sidewalls, ultimately limiting overall pixel efficiency.</p><p>Current display technologies predominantly use backplanes with thin-film transistors (TFT) on glass substrates, optimized for high-yield production in display fabrication facilities that handle large substrates. Transitioning these TFT production lines to accommodate high-resolution microLED backplanes required for AR/MR displays presents significant engineering hurdles that may not be financially sustainable. For instance, manufacturing AR/MR displays at 5,000 ppi entails producing millions of subpixels in a small area—a monumental engineering feat. A more viable solution for AR/MR displays may lie in using silicon complementary metal-oxide semiconductor (CMOS) backplanes. Some companies have already demonstrated silicon CMOS backplanes capable of achieving 3,000-ppi resolutions. The ongoing development of high-yield CMOS backplanes at larger sizes with resolutions exceeding 5,000 ppi is still in its nascent stages, but this holds promise for future advancements.</p><p>To foster a sustainable business model, it is essential to develop microLED display technology applicable to both direct-view and near-eye applications using processes and tools adaptable for both TFT on glass and silicon CMOS backplanes. The advancements in microLED display manufacturing are highlighted in this issue, which includes three articles focused on critical aspects of microLED manufacturing technology. Additionally, a fourth article discusses scaling OLED technology, showcasing the ongoing innovations in display manufacturing.</p><p>In the article “Laser-Assisted Bonding for MicroLED Modules in Head-Up Display Applications,” Wenya Tian et al. discuss a 3.8-inch, 1,280 × 1,024 ultrahigh-resolution, ultrahigh-brightness head-up display module that achieves a lighting yield exceeding 99.9 percent. The laser-assisted eutectic bonding used in assembling this display is shown to have improved photoelectric efficiency by 51.3 percent.</p><p>In the next article, “Enabling Next-Generation MicroLED Displays Through ACF-Based Bonding Solutions,” Hiroki Ozeki et al. describe the use of a novel particle-arrayed ACF specifically designed for microLED display applications. The methods used in this approach enable reliable, low-temperature bonding on ultra-small pads, addressing key manufacturing challenges in next-generation display technologies.</p><p>In the third article, “Novel Package Design Enhances Optical Efficiency of MicroLED Displays,” Naiwei Liu et al. used a high-refractive-index transparent resist to significantly enhance the light extraction efficiency of microLEDs. Additionally, a high-reflectivity white resin material combined with lens microstructures is adopted to converge the light from a wide viewing angle, increasing the brightness at the 0-degree viewing angle by approximately 53 percent.</p><p>In the final article, “Revolutionary MAX OLED Solution for Next-Generation OLED Displays,” Yu-Hsin Lin et al. addressed critical limitations of traditional RGB OLED patterning processes. It was shown that MAX OLED significantly improved aperture ratio, brightness, resolution, and display longevity. The precise angle-controlled deposition and pixelated encapsulation techniques protect sensitive OLED materials.</p><p>This shift toward microLED technology signifies a transformative moment in the future of displays, while advances in OLED display manufacturing continue to evolve with the potential to redefine performance standards across a variety of applications.</p>\",\"PeriodicalId\":52450,\"journal\":{\"name\":\"Information Display\",\"volume\":\"41 5\",\"pages\":\"\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2025-09-23\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"https://sid.onlinelibrary.wiley.com/doi/epdf/10.1002/msid.1606\",\"citationCount\":\"0\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"Information Display\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://sid.onlinelibrary.wiley.com/doi/10.1002/msid.1606\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"Q4\",\"JCRName\":\"Engineering\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"Information Display","FirstCategoryId":"1085","ListUrlMain":"https://sid.onlinelibrary.wiley.com/doi/10.1002/msid.1606","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"Q4","JCRName":"Engineering","Score":null,"Total":0}
引用次数: 0

摘要

使用microled(微小的氮化镓发光二极管)作为亚像素代表了显示技术的重大进步,提供了更好的亮度,能源效率和色彩质量。这一创新为直视显示器的高动态范围带来了新的机遇,同时也为增强和混合现实(AR/MR)应用提供了高亮度和更宽视角的近眼显示器。然而,为了充分实现这一潜力,必须解决几个关键挑战,特别是在模转移和激光辅助或各向异性导电膜(ACF)键合期间的像素成像率、光学效率和制造成本方面。微型LED显示器的传统制造方法包括使用在蓝宝石(或硅)晶圆上外延生长的红、绿、蓝(RGB) GaN LED片。值得注意的是,在砷化镓(或硅或锗)衬底上生长的AlGaInP红片可以被取代。在这些传统方法中,在每个晶圆上创建骰子阵列,然后通过涉及多个中间体的一系列复杂步骤转移到背板上。这种复杂的转移过程可能导致产量损失,需要实施模具修复措施或以两套RGB骰子的形式冗余,这两者都有助于提高制造成本。此外,随着晶片尺寸的减小以实现成本效益,微led的效率往往会由于侧壁载流子损耗的增加而下降,最终限制了整体像素效率。目前的显示技术主要是在玻璃基板上使用带有薄膜晶体管(TFT)的背板,这是针对处理大型基板的显示制造设施的高产产量进行优化的。过渡这些TFT生产线以适应AR/MR显示器所需的高分辨率微led背板存在重大的工程障碍,可能在财务上不可持续。例如,制造5000 ppi的AR/MR显示器需要在一个小区域内产生数百万个子像素——这是一个巨大的工程壮举。AR/MR显示器的一个更可行的解决方案可能是使用硅互补金属氧化物半导体(CMOS)背板。一些公司已经展示了能够达到3000 ppi分辨率的硅CMOS背板。目前,分辨率超过5000 ppi的大尺寸高产量CMOS背板的开发仍处于起步阶段,但这为未来的进步带来了希望。为了培育可持续的商业模式,必须开发适用于直视和近眼应用的微型led显示技术,使用适用于玻璃和硅CMOS背板上TFT的工艺和工具。这一期重点介绍了微led显示屏制造的进展,其中包括三篇文章,重点介绍了微led制造技术的关键方面。此外,第四篇文章讨论了缩放OLED技术,展示了显示器制造中正在进行的创新。在文章“激光辅助键合用于平视显示应用的微led模块”中,田文亚等人讨论了一种3.8英寸,1,280 × 1,024超高分辨率,超高亮度的平视显示模块,其照明率超过99.9%。激光辅助共晶键合用于组装该显示器,其光电效率提高了51.3%。在下一篇文章“通过基于ACF的键接解决方案实现下一代MicroLED显示器”中,Hiroki Ozeki等人描述了一种专门为MicroLED显示器应用设计的新型粒子阵列ACF的使用。该方法可在超小型焊盘上实现可靠的低温粘合,解决了下一代显示技术的关键制造挑战。在第三篇文章“新颖的封装设计提高了MicroLED显示器的光学效率”中,刘乃伟等人使用高折射率透明阻片显著提高了MicroLED的光提取效率。此外,采用高反射率白色树脂材料结合透镜微结构,使光线从宽视角汇聚,使0度视角下的亮度增加约53%。在最后一篇文章“下一代OLED显示器的革命性MAX OLED解决方案”中,Yu-Hsin Lin等人解决了传统RGB OLED图案工艺的关键局限性。结果表明,MAX OLED显著提高了光圈比、亮度、分辨率和显示寿命。精确的角度控制沉积和像素化封装技术保护敏感的OLED材料。 这种向微led技术的转变标志着显示器未来的变革时刻,而OLED显示器制造的进步继续发展,有可能重新定义各种应用的性能标准。
本文章由计算机程序翻译,如有差异,请以英文原文为准。

MicroLED Technology Shift Signifies a Transformative Moment in Displays

MicroLED Technology Shift Signifies a Transformative Moment in Displays

MicroLED Technology Shift Signifies a Transformative Moment in Displays

THE USE OF MICROLEDS (TINY LIGHT-EMITTING DIODES of gallium nitride) as subpixels represents a significant advancement in display technology, offering improved luminance, energy efficiency, and color quality. This innovation unlocks new opportunities in high dynamic range in direct-view displays, while also enabling high brightness and wider viewing angle near-eye displays for augmented and mixed reality (AR/MR) applications. However, to fully realize this potential, several critical challenges must be addressed, particularly in the realms of pixel yield during die-transfer and laser-assisted or anisotropic conductive film (ACF) bonding, optical efficiency, and manufacturing costs.

The traditional fabrication methods for microLED displays involve the use of red, green, and blue (RGB) GaN LED dice epitaxially grown on sapphire (or silicon) wafers. It is worth noting that AlGaInP red dice grown on gallium arsenide (or silicon or germanium) substrates may be substituted. In these conventional approaches, arrays of dice are created on each wafer and subsequently transferred to a backplane through a series of complex steps involving multiple interposers. This intricate transfer process can lead to yield loss, necessitating the implementation of die repair measures or redundancy in the form of two sets of RGB dice, both of which contribute to higher manufacturing costs. Furthermore, as the die-size decreases to achieve cost efficiency, microLED efficiency tends to decline based on increased carrier loss at the sidewalls, ultimately limiting overall pixel efficiency.

Current display technologies predominantly use backplanes with thin-film transistors (TFT) on glass substrates, optimized for high-yield production in display fabrication facilities that handle large substrates. Transitioning these TFT production lines to accommodate high-resolution microLED backplanes required for AR/MR displays presents significant engineering hurdles that may not be financially sustainable. For instance, manufacturing AR/MR displays at 5,000 ppi entails producing millions of subpixels in a small area—a monumental engineering feat. A more viable solution for AR/MR displays may lie in using silicon complementary metal-oxide semiconductor (CMOS) backplanes. Some companies have already demonstrated silicon CMOS backplanes capable of achieving 3,000-ppi resolutions. The ongoing development of high-yield CMOS backplanes at larger sizes with resolutions exceeding 5,000 ppi is still in its nascent stages, but this holds promise for future advancements.

To foster a sustainable business model, it is essential to develop microLED display technology applicable to both direct-view and near-eye applications using processes and tools adaptable for both TFT on glass and silicon CMOS backplanes. The advancements in microLED display manufacturing are highlighted in this issue, which includes three articles focused on critical aspects of microLED manufacturing technology. Additionally, a fourth article discusses scaling OLED technology, showcasing the ongoing innovations in display manufacturing.

In the article “Laser-Assisted Bonding for MicroLED Modules in Head-Up Display Applications,” Wenya Tian et al. discuss a 3.8-inch, 1,280 × 1,024 ultrahigh-resolution, ultrahigh-brightness head-up display module that achieves a lighting yield exceeding 99.9 percent. The laser-assisted eutectic bonding used in assembling this display is shown to have improved photoelectric efficiency by 51.3 percent.

In the next article, “Enabling Next-Generation MicroLED Displays Through ACF-Based Bonding Solutions,” Hiroki Ozeki et al. describe the use of a novel particle-arrayed ACF specifically designed for microLED display applications. The methods used in this approach enable reliable, low-temperature bonding on ultra-small pads, addressing key manufacturing challenges in next-generation display technologies.

In the third article, “Novel Package Design Enhances Optical Efficiency of MicroLED Displays,” Naiwei Liu et al. used a high-refractive-index transparent resist to significantly enhance the light extraction efficiency of microLEDs. Additionally, a high-reflectivity white resin material combined with lens microstructures is adopted to converge the light from a wide viewing angle, increasing the brightness at the 0-degree viewing angle by approximately 53 percent.

In the final article, “Revolutionary MAX OLED Solution for Next-Generation OLED Displays,” Yu-Hsin Lin et al. addressed critical limitations of traditional RGB OLED patterning processes. It was shown that MAX OLED significantly improved aperture ratio, brightness, resolution, and display longevity. The precise angle-controlled deposition and pixelated encapsulation techniques protect sensitive OLED materials.

This shift toward microLED technology signifies a transformative moment in the future of displays, while advances in OLED display manufacturing continue to evolve with the potential to redefine performance standards across a variety of applications.

求助全文
通过发布文献求助,成功后即可免费获取论文全文。 去求助
来源期刊
Information Display
Information Display Engineering-Electrical and Electronic Engineering
CiteScore
1.40
自引率
0.00%
发文量
85
期刊介绍: Information Display Magazine invites other opinions on editorials or other subjects from members of the international display community. We welcome your comments and suggestions.
×
引用
GB/T 7714-2015
复制
MLA
复制
APA
复制
导出至
BibTeX EndNote RefMan NoteFirst NoteExpress
×
提示
您的信息不完整,为了账户安全,请先补充。
现在去补充
×
提示
您因"违规操作"
具体请查看互助需知
我知道了
×
提示
确定
请完成安全验证×
copy
已复制链接
快去分享给好友吧!
我知道了
右上角分享
点击右上角分享
0
联系我们:info@booksci.cn Book学术提供免费学术资源搜索服务,方便国内外学者检索中英文文献。致力于提供最便捷和优质的服务体验。 Copyright © 2023 布克学术 All rights reserved.
京ICP备2023020795号-1
ghs 京公网安备 11010802042870号
Book学术文献互助
Book学术文献互助群
群 号:604180095
Book学术官方微信