M. Dharani Devi , R. Bakiya Lakshmi , G. Nirexia Shree , Farhat S. Khan , Mohd Taukeer Khan , Sambasivam Sangaraju , Mohd Shkir
{"title":"用于增强气敏应用的掺镨硒化镉薄膜的制备","authors":"M. Dharani Devi , R. Bakiya Lakshmi , G. Nirexia Shree , Farhat S. Khan , Mohd Taukeer Khan , Sambasivam Sangaraju , Mohd Shkir","doi":"10.1016/j.jsamd.2025.100998","DOIUrl":null,"url":null,"abstract":"<div><div>In this work, praseodymium (Pr) was doped into cadmium selenide (CdSe) thin films at concentrations of 0 %, 1 %, 2 %, 3 %, 4 %, and 5 %, and deposited onto glass substrates using the nebulizer spray pyrolysis (NSP) method. The structural, morphological, optical, and photoluminescence (PL) characteristics of the films were investigated. Structural analysis confirmed the crystalline nature and preferred orientation of all the deposited films. Optical studies revealed the interaction of the films with light, with the optical band gap (Eg) decreasing from 2,47 eV for pure CdSe to 2.15 eV for 5 % Pr-doped CdSe. The PL spectra of the as-deposited films showed high intensity in the visible region, with broad UV emission bands centered at 685 nm and 530 nm, respectively. Among the samples, the 3 % Pr-doped CdSe film demonstrated the highest responsivity and repeatability, which is attributed to a higher concentration of selenium vacancies that enhances charge carrier separation. Notably, the 3 % Pr-doped CdSe film exhibited the highest gas response of 259 at 250 ppm. These results suggest that 3 % Pr-doped CdSe is a promising candidate for gas sensing applications due to its superior performance characteristics.</div></div>","PeriodicalId":17219,"journal":{"name":"Journal of Science: Advanced Materials and Devices","volume":"10 4","pages":"Article 100998"},"PeriodicalIF":6.8000,"publicationDate":"2025-09-13","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":"{\"title\":\"Fabrication of praseodymium-doped cadmium selenide thin films for enhanced gas sensing applications\",\"authors\":\"M. Dharani Devi , R. Bakiya Lakshmi , G. Nirexia Shree , Farhat S. Khan , Mohd Taukeer Khan , Sambasivam Sangaraju , Mohd Shkir\",\"doi\":\"10.1016/j.jsamd.2025.100998\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"<div><div>In this work, praseodymium (Pr) was doped into cadmium selenide (CdSe) thin films at concentrations of 0 %, 1 %, 2 %, 3 %, 4 %, and 5 %, and deposited onto glass substrates using the nebulizer spray pyrolysis (NSP) method. The structural, morphological, optical, and photoluminescence (PL) characteristics of the films were investigated. Structural analysis confirmed the crystalline nature and preferred orientation of all the deposited films. Optical studies revealed the interaction of the films with light, with the optical band gap (Eg) decreasing from 2,47 eV for pure CdSe to 2.15 eV for 5 % Pr-doped CdSe. The PL spectra of the as-deposited films showed high intensity in the visible region, with broad UV emission bands centered at 685 nm and 530 nm, respectively. Among the samples, the 3 % Pr-doped CdSe film demonstrated the highest responsivity and repeatability, which is attributed to a higher concentration of selenium vacancies that enhances charge carrier separation. Notably, the 3 % Pr-doped CdSe film exhibited the highest gas response of 259 at 250 ppm. These results suggest that 3 % Pr-doped CdSe is a promising candidate for gas sensing applications due to its superior performance characteristics.</div></div>\",\"PeriodicalId\":17219,\"journal\":{\"name\":\"Journal of Science: Advanced Materials and Devices\",\"volume\":\"10 4\",\"pages\":\"Article 100998\"},\"PeriodicalIF\":6.8000,\"publicationDate\":\"2025-09-13\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"0\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"Journal of Science: Advanced Materials and Devices\",\"FirstCategoryId\":\"88\",\"ListUrlMain\":\"https://www.sciencedirect.com/science/article/pii/S2468217925001510\",\"RegionNum\":3,\"RegionCategory\":\"材料科学\",\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"Q1\",\"JCRName\":\"MATERIALS SCIENCE, MULTIDISCIPLINARY\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"Journal of Science: Advanced Materials and Devices","FirstCategoryId":"88","ListUrlMain":"https://www.sciencedirect.com/science/article/pii/S2468217925001510","RegionNum":3,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"Q1","JCRName":"MATERIALS SCIENCE, MULTIDISCIPLINARY","Score":null,"Total":0}
Fabrication of praseodymium-doped cadmium selenide thin films for enhanced gas sensing applications
In this work, praseodymium (Pr) was doped into cadmium selenide (CdSe) thin films at concentrations of 0 %, 1 %, 2 %, 3 %, 4 %, and 5 %, and deposited onto glass substrates using the nebulizer spray pyrolysis (NSP) method. The structural, morphological, optical, and photoluminescence (PL) characteristics of the films were investigated. Structural analysis confirmed the crystalline nature and preferred orientation of all the deposited films. Optical studies revealed the interaction of the films with light, with the optical band gap (Eg) decreasing from 2,47 eV for pure CdSe to 2.15 eV for 5 % Pr-doped CdSe. The PL spectra of the as-deposited films showed high intensity in the visible region, with broad UV emission bands centered at 685 nm and 530 nm, respectively. Among the samples, the 3 % Pr-doped CdSe film demonstrated the highest responsivity and repeatability, which is attributed to a higher concentration of selenium vacancies that enhances charge carrier separation. Notably, the 3 % Pr-doped CdSe film exhibited the highest gas response of 259 at 250 ppm. These results suggest that 3 % Pr-doped CdSe is a promising candidate for gas sensing applications due to its superior performance characteristics.
期刊介绍:
In 1985, the Journal of Science was founded as a platform for publishing national and international research papers across various disciplines, including natural sciences, technology, social sciences, and humanities. Over the years, the journal has experienced remarkable growth in terms of quality, size, and scope. Today, it encompasses a diverse range of publications dedicated to academic research.
Considering the rapid expansion of materials science, we are pleased to introduce the Journal of Science: Advanced Materials and Devices. This new addition to our journal series offers researchers an exciting opportunity to publish their work on all aspects of materials science and technology within the esteemed Journal of Science.
With this development, we aim to revolutionize the way research in materials science is expressed and organized, further strengthening our commitment to promoting outstanding research across various scientific and technological fields.